# US 10,371,460 B2 · Heat storage member

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- Number: US 10,371,460 B2
- Document ID: US10371460B2
- Status: Granted
- Kind: B2
- Application number: 15/468,586
- Filed: 2017-03-24
- Published: 2017-10-05
- Granted: 2019-08-06
- Earliest claimed: 2016-03-31
- Assignees: NGK Insulators, Ltd.; NGK Adrec Co., Ltd.
- Applicants: Ngk Insulators, Ltd.; NGK Adrec Co., Ltd.
- Inventors: Shinichi Miwa; Toshiharu Kinoshita; Iori Himoto
- Web page: https://patentgrep.com/patent/US10371460B2

## CPC

- F28D 20/003: {using thermochemical reactions}
- C09K 5/16: Materials undergoing chemical reactions when used
- Y02E 60/14: Thermal energy storage
- F28D: HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT (fluid heaters having heat generating means and heat transferring means F24H; furnaces F27; details of heat-exchange apparatus of general)
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.

## Claims

### Claim 1

A heat storage member comprising:
a substrate containing a SiC sintered body as a principal ingredient;
a coating layer disposed in a surface of the substrate; and
a heat storage material disposed in a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium, or
a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium;
wherein a softening point of the coating layer is a temperature at 1000° C. or less.

### Claim 2 (depends on 1)

The heat storage member according to claim 1, wherein the coating layer contains P2O5 as a principal ingredient, and a content rate of P2O5 is 20 to 45% by mass.

### Claim 3 (depends on 1)

The heat storage member according to claim 1, wherein the coating layer contains B2O3 as a principal ingredient, and a content rate of B2O3 is 20 to 45% by mass.

### Claim 4 (depends on 1)

The heat storage member according to claim 1, wherein the coating layer contains Bi2O3 as a principal ingredient, and a content rate of Bi2O3 is 65 to 85% by mass.

### Claim 5 (depends on 2)

The heat storage member according to claim 2, wherein the coating layer contains as a secondary ingredient at least one of Al2O3, SiO2, ZnO, V2O5, PbO, SnO, B2O3 and Bi2O3.

### Claim 6 (depends on 3)

The heat storage member according to claim 3, wherein the coating layer contains as a secondary ingredient at least one of Al2O3, SiO2, ZnO, V2O5, PbO, SnO, P2O5 and Bi2O3.

### Claim 7 (depends on 4)

The heat storage member according to claim 4, wherein the coating layer contains as a secondary ingredient at least one of Al2O3, SiO2, ZnO, V2O5, PbO, SnO, P2O5 and B2O3.

### Claim 8 (depends on 2)

The heat storage member according to claim 2, wherein the coating layer contains as the secondary ingredient at least one of CaO, BaO, SrO represented by RO and Li2O, Na2O, K2O represented by R2O.

### Claim 9 (depends on 2)

The heat storage member according to claim 2, wherein the coating layer contains as the secondary ingredient at least one of TeO2 and TiO2.

### Claim 10 (depends on 1)

The heat storage member according to claim 1, wherein the substrate has a content ratio of SiC ranging from 40 to 99.7% by mass, excluding an impure ingredient inevitably contained in a raw material.

### Claim 11 (depends on 1)

The heat storage member according to claim 1, wherein the substrate is a porous material including a void, and the coating layer is disposed at least in a part of a surface of the void in the substrate.

### Claim 12 (depends on 1)

The heat storage member according to claim 1, wherein the substrate includes a void, and has a three-dimensional network structure including a skeleton having a porosity of 1% or less, and the coating layer is disposed at least in a part of the surface of the void.

### Claim 13 (depends on 12)

The heat storage member according to claim 12, wherein the skeleton includes a Si—SiC sintered body, and a content ratio of metal Si in the skeleton is ranging from 5 to 60% by mass.

### Claim 14 (depends on 1)

The heat storage member according to claim 1, wherein the surface of the coating layer is disposed with protrusions having a difference between recesses and protrusions of 0.5 to 100 μm.

### Claim 15 (depends on 14)

The heat storage member according to claim 14, wherein density of the protrusions with respect to a surface area of the coating layer is 1 to 1000000 protrusions/10000 μm2.

### Claim 16 (depends on 15)

The heat storage member according to claim 15, wherein the coating layer includes particulates dispersed in the coating layer and having an average particle diameter of 5 nm to 100 μm.

### Claim 17 (depends on 16)

The heat storage member according to claim 16, wherein the particulates are at least one of SiC particles, metal Si particles, Si—SiC particles, and C particles.

### Claim 18 (depends on 1)

The heat storage member according to claim 1, wherein the heat storage material includes at least one selected from the group consisting of oxides of Mg, Ca, Sr, Ba, hydroxides of Mg, Ca, Sr, Ba, carbonates of Mg, Ca, Sr, Ba, chlorides of Mg, Ca, Sr, Ba, sulfates of Mg, Ca, Sr, Ba, and zeolite.

### Claim 19 (depends on 1)

The heat storage member according to claim 1, wherein the heat storage material is a particulate having an average particle diameter ranging from 5 nm to 100 μm.
