# US 10,370,766 B2 · Hybrid photo-electrochemical and photo-voltaic cells > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,370,766 B2 - Document ID: US10370766B2 - Status: Granted - Kind: B2 - Application number: 15/794,312 - Filed: 2017-10-26 - Published: 2018-05-03 - Granted: 2019-08-06 - Earliest claimed: 2016-10-27 - Assignees: The Regents of the University of California - Applicants: The Regents of the University of California; Technion—Israel Institute of Technology - Inventors: Gideon Segev; Ian D. Sharp; Hen Dotan; Avner Rothschild - Web page: https://patentgrep.com/patent/US10370766B2 ## CPC - H10F 10/00: Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) - C25B 1/04: by electrolysis of water - C25B 1/55: Photoelectrolysis - C25B 9/00: Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features - C25B 9/50: Cells or assemblies of cells comprising photoelectrodes; Assemblies of constructional parts thereof - C25B 9/60: Constructional parts of cells - C25B 11/057: consisting of a single element or compound - H01G 9/20: Light-sensitive devices - H01G 9/2031: {comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence)} - H02S 10/00: PV power plants; Combinations of PV energy systems with other systems for the generation of electric power - H02S 10/10: including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems (combinations with gas-turbine plants F02C6/00) - H02S 10/20: Systems characterised by their energy storage means (H02S40/38 takes precedence) - H10F 10/142: comprising multiple PN homojunctions, e.g. tandem cells - H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side} - H10F 77/1223: characterised by the dopants - H10F 77/1233: {characterised by the dopants} - H10F 77/1243: {characterised by the dopants} - H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP} - Y02E 10/542: Dye sensitized solar cells - Y02E 10/547: Monocrystalline silicon PV cells - Y02E 10/56: Power conversion systems, e.g. maximum power point trackers - Y02E 60/36: Hydrogen production from non-carbon containing sources, e.g. by water electrolysis - Y02E 70/30: Systems combining energy storage with energy generation of non-fossil origin - Y02P 20/133: Renewable energy sources, e.g. sunlight - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - C25B: ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR (anodic or cathodic protection C23F13/00; single-crystal growth C30B) - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) - H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract This disclosure provides systems, methods, and apparatus related to a hybrid photo-electrochemical and photo-voltaic cell. In one aspect, device includes a substrate comprising a semiconductor, a transparent conductor disposed on the second surface of the substrate, a photoanode disposed on the transparent conductor, an electrolyte in electrical communication with the photoanode, and an electrode in contact with the electrolyte. The substrate is doped with a first n-type dopant. A first area of a first surface of the substrate is heavily doped with a first p-type dopant. A second area of the first surface of the substrate is heavily doped with a second n-type dopant. The second surface of the substrate is heavily doped with a second p-type dopant. The electrode is in electrical contact with the second area. The first area is in electrical contact with the second area through an electrical load. ## Claims ### Claim 1 A device comprising: a substrate comprising a semiconductor, the substrate being doped with a first n-type dopant, a first area of a first surface of the substrate being heavily doped with a first p-type dopant, a second area of the first surface of the substrate being heavily doped with a second n-type dopant, a third area of the substrate being between the first area and the second area, a second surface of the substrate being heavily doped with a second p-type dopant; a transparent conductor disposed on the second surface of the substrate; a photoanode disposed on the transparent conductor; an electrolyte in electrical communication with the photoanode; and an electrode in contact with the electrolyte, the electrode being in electrical contact with the second area, the first area being in electrical contact with the second area through an electrical load. ### Claim 2 (depends on 1) The device of claim 1, wherein the semiconductor is selected from a group consisting of silicon, germanium, gallium arsenide, cadmium telluride, and gallium indium phosphide. ### Claim 3 (depends on 1) The device of claim 1, wherein the substrate is about 100 microns to 300 microns thick. ### Claim 4 (depends on 1) The device of claim 1, wherein the first n-type dopant and the second n-type dopant are selected from a group consisting of phosphorus, arsenic, and antimony. ### Claim 5 (depends on 1) The device of claim 1, wherein the first p-type dopant and the second p-type dopant are selected from a group consisting of aluminum and boron. ### Claim 6 (depends on 1) The device of claim 1, wherein the semiconductor is doped to a level of about 1014 atoms/cm3 to 1016 atoms/cm3. ### Claim 7 (depends on 1) The device of claim 1, wherein the first area, the second area, and the second surface are doped to a level of about 1018 atoms/cm3 to 1020 atoms/cm3. ### Claim 8 (depends on 1) The device of claim 1, wherein the electrolyte comprises sodium hydroxide, potassium hydroxide, or sulfonic acid. ### Claim 9 (depends on 1) The device of claim 1, wherein the photoanode is selected from a group consisting of gallium indium phosphide, iron oxide, and bismuth vanadate. ### Claim 10 (depends on 1) The device of claim 1, wherein the electrode comprises a photocathode, and wherein the photocathode comprises gallium phosphide. ### Claim 11 A device comprising: a substrate comprising a semiconductor, the substrate being doped with a first p-type dopant, a first area of a first surface of the substrate being heavily doped with a first n-type dopant, a second area of the first surface of the substrate being heavily doped with a second p-type dopant, a third area of the substrate being between the first area and the second area, a second surface of the substrate being heavily doped with a second n-type dopant; a transparent conductor disposed on the second surface of the substrate; a photocathode disposed on the transparent conductor; an electrolyte in electrical communication with the photocathode; and an electrode in contact with the electrolyte, the electrode being in electrical contact with the second area, the first area being in electrical contact with the second area through an electrical load. ### Claim 12 (depends on 11) The device of claim 11, wherein the semiconductor is selected from a group consisting of silicon, germanium, gallium arsenide, cadmium telluride, and gallium indium phosphide. ### Claim 13 (depends on 11) The device of claim 11, wherein the substrate is about 100 microns to 300 microns thick. ### Claim 14 (depends on 11) The device of claim 11, wherein the first n-type dopant and the second n-type dopant are selected from a group consisting of phosphorus, arsenic, and antimony. ### Claim 15 (depends on 11) The device of claim 11, wherein the first p-type dopant and the second p-type dopant are selected from a group consisting of aluminum and boron. ### Claim 16 (depends on 11) The device of claim 11, wherein the semiconductor is doped to a level of about 1014 atoms/cm3 to 1016 atoms/cm3. ### Claim 17 (depends on 11) The device of claim 11, wherein the first area, the second area, and the second surface are doped to a level of about 1018 atoms/cm3 to 1020 atoms/cm3. ### Claim 18 (depends on 11) The device of claim 11, wherein the electrolyte comprises sodium sulfate, sodium borate, or sulfonic acid. ### Claim 19 (depends on 11) The device of claim 11, wherein the photocathode is selected from a group consisting of gallium phosphide, gallium indium phosphide, and cuprous oxide. ### Claim 20 (depends on 11) The device of claim 11, wherein the electrode comprises a photoanode, and wherein the photoanode is selected from a group consisting of gallium indium phosphide, iron oxide, and bismuth vanadate.