# US 10,370,763 B2 · Plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,370,763 B2 - Document ID: US10370763B2 - Status: Granted - Kind: B2 - Application number: 15/131,409 - Filed: 2016-04-18 - Published: 2017-10-19 - Granted: 2019-08-06 - Earliest claimed: 2016-04-18 - Assignees: Tokyo Electron Limited - Applicants: Takahiro Hirano; Toshihiko Iwao; Takaaki Kato - Inventors: Takahiro Hirano; Toshihiko Iwao; Takaaki Kato - Web page: https://patentgrep.com/patent/US10370763B2 ## CPC - C23C 16/511: using microwave discharges - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/45538: {Plasma being used continuously during the ALD cycle} - C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments} - C23C 16/4584: {the substrate being rotated} - H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)} - H01J 37/3222: {Antennas} - H01J 37/32238: {Windows} - H01J 37/32899: {Multiple chambers, e.g. cluster tools} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table. ## Claims ### Claim 1 A plasma processing apparatus that processes a processing target substrate using microwave plasma comprising: a processing container including a lower member which surrounds a processing space for processing the substrate and a removable upper member, wherein the removable upper member serves as a cover of the lower member; a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container, wherein the dielectric plate includes: a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed along a peripheral edge of a surface of the flat plate portion that is opposite to the surface facing the placing table to protrude upwardly from the flat plate portion, the antenna being supported on the upper member of the processing container by the flat plate portion and the rib, and the antenna further includes a conductor plate that is provided on the surface of the flat plate portion that is opposite to the surface facing the placing table while being surrounded by the rib and configured to propagate the microwaves. ### Claim 2 (depends on 1) The plasma processing apparatus of claim 1, wherein the rib is provided in the flat plate portion over the whole peripheral edge of the surface of the flat plate portion that is opposite to the surface facing the placing table. ### Claim 3 (depends on 1) The plasma processing apparatus of claim 1, wherein, assuming that a wavelength of the microwaves in the dielectric plate is λ, a thickness of the flat plate portion is within a range of λ/8 to 3λ/8. ### Claim 4 (depends on 1) The plasma processing apparatus of claim 1, wherein a height of the rib from the flat plate portion is within a range of twice to four times the thickness of the flat plate portion. ### Claim 5 (depends on 1) The plasma processing apparatus of claim 1, wherein a thickness of the rib is within a range of one to 1.5 times the thickness of the flat plate portion. ### Claim 6 (depends on 1) The plasma processing apparatus of claim 1, wherein the flat plate portion is subjected to a predetermined coating on the surface facing the placing table. ### Claim 7 (depends on 1) The plasma processing apparatus of claim 1, wherein a distance between a bottom surface of the flat plate portion and the processing target substrate placed on the placing table is within a range of three times to four times the thickness of the flat plate portion. ### Claim 8 (depends on 1) The plasma processing apparatus of claim 1, wherein the dielectric plate is made of alumina, quartz, aluminum nitride, silicon nitride, or yttrium oxide. ### Claim 9 (depends on 1) The plasma processing apparatus of claim 1, wherein the placing table is provided to be rotatable around an axis such that the processing target substrate is moved around the axis, the processing container is divided into a plurality of regions in a circumferential direction where the processing substrate is moved around the axis by the rotation of the placing table, and the antenna radiates the microwaves into the processing container through the dielectric plate, in one of the plurality of regions, to generate plasma of a processing gas supplied into the processing container. ### Claim 10 (depends on 9) The plasma processing apparatus of claim 9, wherein the antenna has an equilateral triangular shape in cross-section when viewed in a direction along the axis. ### Claim 11 (depends on 1) The plasma processing apparatus of claim 1, wherein the surface of the flat plate portion facing the placing table is coated with Al2O3, Y2O3, or YF2. ### Claim 12 (depends on 1) The plasma processing apparatus of claim 1, wherein when the dielectric plate is made of alumina, a thickness of the flat plate portion is within a range of about 5 mm to about 15 mm with respect to the microwaves. ### Claim 13 (depends on 1) The plasma processing apparatus of claim 1, wherein the antenna further includes a slow-wave plate that is provided on a top surface of the conductor plate while being surrounded by the rib and configured to propagate the microwaves. ### Claim 14 (depends on 13) The plasma processing apparatus of claim 13, wherein the antenna further includes a cooling plate that is provided on a top surface of the slow-wave plate while being surrounded by the rib and configured to cool the antenna.