# US 10,370,299 B2 · Ultra-high dielectric constant garnet

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- Number: US 10,370,299 B2
- Document ID: US10370299B2
- Status: Granted
- Kind: B2
- Application number: 15/715,443
- Filed: 2017-09-26
- Published: 2018-05-03
- Granted: 2019-08-06
- Earliest claimed: 2015-06-15
- Assignees: Skyworks Solutions, Inc.
- Applicants: Skyworks Solutions, Inc.
- Inventors: David Bowie Cruickshank; Michael David Hill
- Web page: https://patentgrep.com/patent/US10370299B2

## CPC

- C04B 35/48: based on zirconium or hafnium oxides, zirconates, {zircon} or hafnates
- C04B 35/2641: {Compositions containing one or more ferrites of the group comprising rare earth metals and one or more ferrites of the group comprising alkali metals, alkaline earth metals or lead}
- C04B 35/2675: {Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets}
- C04B 35/624: Sol-gel processing
- C04B 35/6261: {Milling}
- C04B 35/6262: {of calcined, sintered clinker or ceramics}
- C04B 35/62655: {Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying}
- C04B 35/62675: {characterised by the treatment temperature}
- C04B 35/64: Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F})
- C04B 35/645: Pressure sintering
- C04B 41/0027: {Ion-implantation, ion-irradiation or ion-injection}
- C04B 41/009: {characterised by the material treated}
- C04B 41/80: of only ceramics
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3225: Yttrium oxide or oxide-forming salts thereof
- C04B 2235/3239: Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
- C04B 2235/3244: Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
- C04B 2235/3248: Zirconates or hafnates, e.g. zircon
- C04B 2235/3255: Niobates or tantalates, e.g. silver niobate
- C04B 2235/3256: Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate
- C04B 2235/3272: Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
- C04B 2235/3274: Ferrites
- C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
- C04B 2235/3294: Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/442: Carbonates
- C04B 2235/5427: millimeter or submillimeter sized, i.e. larger than 0,1 mm
- C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/5454: nanometer sized, i.e. below 100 nm
- C04B 2235/604: Pressing at temperatures other than sintering temperatures
- C04B 2235/608: Green bodies or pre-forms with well-defined density
- C04B 2235/77: Density
- C04B 2235/79: Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
- H01P 1/2084: {with dielectric resonators}
- H01P 1/36: Isolators
- H01P 1/38: Circulators
- H01P 11/008: {Manufacturing resonators}
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)

## Abstract

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

## Claims

### Claim 1

An ultra-high dielectric constant garnet comprising:
an yttrium iron garnet crystal structure with at least some yttrium being substituted out for bismuth, at least some yttrium being substituted by gadolinium, and charge balance achieved by calcium or zirconium substituting for at least some yttrium.

### Claim 2 (depends on 1)

The ultra-high dielectric constant garnet of claim 1 wherein the ultra-high dielectric constant garnet has a dielectric constant of at least 40.

### Claim 3 (depends on 1)

The ultra-high dielectric constant garnet of claim 1 wherein the ultra-high dielectric constant garnet does not contain sillenite.

### Claim 4 (depends on 1)

The ultra-high dielectric constant garnet of claim 1 further including hafnium or titanium incorporated into octahedral sites of the yttrium iron garnet crystal structure.

### Claim 5 (depends on 1)

The ultra-high dielectric constant garnet of claim 1 wherein the ultra-high dielectric constant garnet contains no yttrium.

### Claim 6 (depends on 1)

The ultra-high dielectric constant garnet of claim 1 wherein the ultra-high dielectric constant garnet has a magnetization of 1600 4πMs or above.

### Claim 7

A method of producing an ultra-high dielectric constant garnet, the method comprising:
providing an yttrium iron garnet structure;
substituting out at least some yttrium for bismuth;
substituting out at least some yttrium for gadolinium; and
charge balancing by substituting out at least some yttrium for calcium or zirconium.

### Claim 8 (depends on 7)

The method of claim 7 wherein the ultra-high dielectric constant garnet has a dielectric constant of at least 40.

### Claim 9 (depends on 7)

The method of claim 7 wherein the ultra-high dielectric constant garnet does not contain sillenite.

### Claim 10 (depends on 7)

The method of claim 7 wherein the ultra-high dielectric constant garnet contains no yttrium.

### Claim 11 (depends on 7)

The method of claim 7 further including incorporating hafnium or titanium into octahedral sites of the yttrium iron garnet crystal structure.

### Claim 12 (depends on 7)

The method of claim 7 wherein the ultra-high dielectric constant garnet has a magnetization of 1600 4πMs or above.

### Claim 13

A radiofrequency device comprising:
a component formed from an ultra-high dielectric constant garnet having an yttrium iron garnet crystal structure with at least some yttrium being substituted out for bismuth, at least some yttrium being substituted by gadolinium, and charge balance achieved by calcium or zirconium substituting for at least some yttrium.

### Claim 14 (depends on 13)

The radiofrequency device of claim 13 wherein the component is an antenna.

### Claim 15 (depends on 13)

The radiofrequency device of claim 13 wherein the radiofrequency device is a radiofrequency circuit board.

### Claim 16 (depends on 13)

The radiofrequency device of claim 13 wherein the ultra-high dielectric constant garnet does not contain sillenite.

### Claim 17 (depends on 13)

The radiofrequency device of claim 13 wherein the ultra-high dielectric constant garnet contains no yttrium.

### Claim 18 (depends on 13)

The radiofrequency device of claim 13 wherein the ultra-high dielectric constant garnet has a dielectric constant of at least 40.

### Claim 19 (depends on 13)

The radiofrequency device of claim 13 wherein the ultra-high dielectric constant garnet has a magnetization of 1600 4πMs or above.

### Claim 20 (depends on 13)

The radiofrequency device of claim 13 further including hafnium or titanium incorporated into octahedral sites of the yttrium iron garnet crystal structure.