# US 10,369,664 B2 · Manufacturing method of semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,369,664 B2 - Document ID: US10369664B2 - Status: Granted - Kind: B2 - Application number: 15/707,017 - Filed: 2017-09-18 - Published: 2018-03-29 - Granted: 2019-08-06 - Earliest claimed: 2016-09-23 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Seiji Yasumoto; Naoto Goto; Satoru Idojiri - Web page: https://patentgrep.com/patent/US10369664B2 ## CPC - B23K 26/57: the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming - G02F 1/136286: {Wiring, e.g. gate line, drain line} - H10D 86/0214: {using temporary substrates} - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 71/80: using temporary substrates - G02F 1/13613: {the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate} - G02F 2201/44: Arrangements combining different electro-active layers, e.g. electrochromic, liquid crystal or electroluminescent layers - H10K 59/1201: {Manufacture or treatment} - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: performing plasma treatment on a first surface of a substrate; forming, over the first surface subjected to the plasma treatment, a first layer using a material comprising a resin; forming a resin layer by performing heat treatment on the first layer; and separating the substrate and the resin layer from each other, wherein the plasma treatment is performed while the first surface is exposed to an atmosphere comprising water vapor and argon. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device, according to claim 1, wherein the step of separating the substrate and the resin layer from each other is performed while a liquid is fed to a separation interface. ### Claim 3 (depends on 2) The method for manufacturing a semiconductor device, according to claim 2, wherein the liquid comprises water. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device, according to claim 1, wherein the heat treatment is performed in an air atmosphere. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device, according to claim 1, wherein the heat treatment is performed while an oxygen-containing gas is supplied. ### Claim 6 (depends on 1) The method for manufacturing a semiconductor device, according to claim 1, wherein the resin layer is formed to comprise a region with a thickness of greater than or equal to 0.1 μm and less than or equal to 5 μm. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device, according to claim 1, wherein an insulating layer is formed so as to be in contact with the substrate and the resin layer and to cover an end portion of the resin layer, and wherein a transistor is formed over the resin layer with the insulating layer positioned between the resin layer and the transistor. ### Claim 8 (depends on 7) The method for manufacturing a semiconductor device, according to claim 7, wherein a channel formation region of the transistor is formed using a metal oxide. ### Claim 9 (depends on 7) The method for manufacturing a semiconductor device, according to claim 7, wherein a channel formation region of the transistor is formed using low-temperature polysilicon. ### Claim 10 A method for manufacturing a semiconductor device, comprising the steps of: performing plasma treatment on a first surface of a substrate; forming, over the first surface subjected to the plasma treatment, a first layer using a material comprising a resin precursor; forming a resin layer by performing heat treatment on the first layer; and separating the substrate and the resin layer from each other, wherein the plasma treatment is performed while the first surface is exposed to an atmosphere comprising water vapor and argon. ### Claim 11 (depends on 10) The method for manufacturing a semiconductor device, according to claim 10, wherein the step of separating the substrate and the resin layer from each other is performed while a liquid is fed to a separation interface. ### Claim 12 (depends on 11) The method for manufacturing a semiconductor device, according to claim 11, wherein the liquid comprises water. ### Claim 13 (depends on 10) The method for manufacturing a semiconductor device, according to claim 10, wherein the heat treatment is performed in an air atmosphere. ### Claim 14 (depends on 10) The method for manufacturing a semiconductor device, according to claim 10, wherein the heat treatment is performed while an oxygen-containing gas is supplied. ### Claim 15 (depends on 10) The method for manufacturing a semiconductor device, according to claim 10, wherein the resin layer is formed to comprise a region with a thickness of greater than or equal to 0.1 μm and less than or equal to 5 μm. ### Claim 16 (depends on 10) The method for manufacturing a semiconductor device, according to claim 10, wherein an insulating layer is formed so as to be in contact with the substrate and the resin layer and to cover an end portion of the resin layer, and wherein a transistor is formed over the resin layer with the insulating layer positioned between the resin layer and the transistor. ### Claim 17 (depends on 16) The method for manufacturing a semiconductor device, according to claim 16, wherein a channel formation region of the transistor is formed using a metal oxide. ### Claim 18 (depends on 16) The method for manufacturing a semiconductor device, according to claim 16, wherein a channel formation region of the transistor is formed using low-temperature polysilicon.