# US 10,369,659 B2 · Wafer producing method

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- Number: US 10,369,659 B2
- Document ID: US10369659B2
- Status: Granted
- Kind: B2
- Application number: 15/015,532
- Filed: 2016-02-04
- Published: 2016-08-11
- Granted: 2019-08-06
- Earliest claimed: 2015-02-09
- Assignees: Disco Corporation
- Applicants: Disco Corporation
- Inventors: Kazuya Hirata; Yoko Nishino; Kunimitsu Takahashi
- Web page: https://patentgrep.com/patent/US10369659B2

## CPC

- B23K 26/0622: by shaping pulses
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 26/032: {using optical means}
- B23K 26/08: Devices involving relative movement between laser beam and workpiece
- B23K 26/0853: {Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane}
- B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B23K 26/702: {Auxiliary equipment}
- B28D 5/0011: {with preliminary treatment, e.g. weakening by scoring}
- C30B 29/36: Carbides
- C30B 29/406: {Gallium nitride}
- C30B 33/06: Joining of crystals
- B23K 2101/40: Semiconductor devices
- B23K 2103/56: {being semiconducting}
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B28D: WORKING STONE OR STONE-LIKE MATERIALS
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot. The separation start point forming step includes a first step of forming the separation start point with a first power and a second step of setting the focal point at the modified layer previously formed in the first step and then applying the laser beam to the ingot with a second power higher than the first power at an increased repetition frequency in the condition where the energy per pulse of the laser beam is the same as that in the first step, thereby separating the cracks from the modified layer.

## Claims

### Claim 1

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface, a second surface opposite to the first surface, a c-axis extending from the first surface to the second surface, and a c-plane perpendicular to the c-axis, the wafer producing method comprising:
a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the hexagonal single crystal ingot inside the hexagonal single crystal ingot at a predetermined depth from the first surface, which predetermined depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam through the first surface as relatively moving the focal point and the hexagonal single crystal ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; and
a wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the hexagonal single crystal ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot;
the separation start point forming step further including:
a modified layer forming sub-step of relatively moving the focal point of the laser beam in a first direction perpendicular to a second direction where the c-axis is inclined by an off angle with respect to a normal to the first surface and the off angle is formed between the first surface and the c-plane, thereby linearly forming the modified layer extending in the first direction, and
an indexing sub-step of relatively moving the focal point in the second direction to thereby index the focal point by a predetermined amount;
wherein the separation start point forming step includes a first separation start point forming sub-step of forming the separation start point with a first power and a second separation start point forming sub-step of setting the focal point at the modified layer previously formed in the first separation start point forming sub-step and then applying the laser beam to the hexagonal single crystal ingot with a second power higher than the first power at an increased repetition frequency in a condition where the energy per pulse of the laser beam is the same as that in the first separation start point forming sub-step, thereby separating the cracks from the modified layer.

### Claim 2 (depends on 1)

The wafer producing method according to claim 1, wherein the wafer separating step includes the sub-steps of immersing the hexagonal single crystal ingot in water and then applying ultrasonic vibration to the hexagonal single crystal ingot, thereby separating the plate-shaped member from the hexagonal single crystal ingot to produce the hexagonal single crystal wafer.

### Claim 3 (depends on 1)

The wafer producing method according to claim 1, wherein the hexagonal single crystal ingot is selected from a SiC single crystal ingot and a GaN single crystal ingot.