Integrating diverse sensors in a single semiconductor device
AssigneeNXP USA, Inc.
InventorsLianjun Liu, David J. Monk
Life of this patent
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Abstract
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
Claims15
A method of manufacturing a sensor system comprising:
- forming a first structure having a substrate layer and a first sensor, the first sensor being positioned on a first side of the substrate layer;
- bonding a cap structure over the first sensor on the first side of the substrate layer;
- depositing a first dielectric layer over the cap structure;
- after bonding the cap structure and depositing the first dielectric layer, fabricating a second sensor on the first dielectric layer, wherein the second sensor includes components that would be damaged at a temperature that is used to bond the cap structure to the first side of the substrate layer.
A method of making a multi-sensor device comprising:
- fabricating a micro-electromechanical system (MEMS) sensor;
- bonding a cap structure over the MEMS sensor to form a hermetically sealed cavity for the MEMS sensor, wherein the cap structure includes a dielectric layer and integrated circuitry formed in a wafer;
- forming a through-silicon via (TSV) in the cap structure;
- forming a redistribution layer on an external surface of the wafer, wherein an interconnect of the redistribution layer is in contact with the TSV in the cap structure;
- depositing an oxide isolation layer over the redistribution layer and portions of the external surface of the wafer that are not covered by the redistribution layer;
- and
- fabricating a magnetic field sensor on the oxide isolation layer.
Dependencies are inferred from the claim text.