Ion implantation apparatus

An ion implantation apparatus comprising:

• an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage;
• an upstream beamline that is disposed downstream of the ion source and includes a mass analyzing magnet and a high-frequency linear accelerator;
• an energy analyzing magnet that is disposed downstream of the upstream beamline;
• a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet;
• an upstream beamline pressure adjusting device that is connected to the upstream beamline so as to adjust an upstream beamline pressure to a first pressure during an ion implantation process;
• and
• a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device,
• wherein the calibration sequence unit controls the upstream beamline pressure adjusting device so as to adjust the upstream beamline pressure to a second pressure higher than the first pressure while producing the energy calibration table.