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US 10,358,407 B2Granted
Synthesis and use of precursors for vapor deposition of tungsten containing thin films
AssigneeASM IP Holding B.V.
InventorsTimo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
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Abstract
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Claims10
A method for making a W(IV) beta-diketonate precursor, comprising:
- providing a first compound comprising a W(IV) halide;
- providing a second compound having the formula ML, wherein M is an alkali metal and L is a beta-diketonato ligand;
- and
- reacting the first compound with the second compound to form a W(IV) beta-diketonate precursor, wherein the W(IV) beta-diketonate precursor does not comprise a halide ligand.
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A method for making a W(IV) beta-diketonate precursor, comprising:
- forming a first product by reacting an alkali metal compound with a beta-diketone compound;
- adding a W(IV) halide to a solvent to form a W(IV) halide solution;
- and
- subsequently adding the first product to the W(IV) halide solution, thereby forming a W(IV) beta-diketonate precursor having the formula WL4, wherein L is a beta-diketonato ligand.
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Dependencies are inferred from the claim text.