Power amplifier for millimeter wave devices

A method, comprising:

• determining a difference between a first power of a first component of a differential output of a power amplifier comprising oscillator core transistors, and a second power of a second component of the differential output;
• adjusting a back gate voltage of a first oscillator core transistor, in response to the first power and the second power differing by equal to or greater than a first threshold;
• setting the back gate voltage of the first oscillator core transistor to a default value, in response to the back gate voltage being adjusted to a maximum value;
• re-determining a difference the first power and the second power, in response to the back gate voltage of the first oscillator core transistor being set to the default value;
• and
• changing a back gate voltage of a second oscillator core transistor, in response to a re-determined difference between the first power and the second power being equal to or greater than a second threshold.

A system, comprising:

• a semiconductor device processing system to manufacture a semiconductor device;
• and
• a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of the semiconductor device processing system;
• wherein the semiconductor device processing system is adapted to:
• form an input transformer;
• form a first differential pair of injection transistors comprising a first transistor and a second transistor;
• form a first back gate voltage source configured to provide a first back gate voltage to the first transistor, wherein the first back gate voltage is adjustable;
• form a second back gate voltage source configured to provide a second back gate voltage to the second transistor, wherein the second back gate voltage is adjustable;
• form a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled;
• form a third back gate voltage source configured to provide a third back gate voltage to the third transistor, wherein the third back gate voltage is adjustable;
• form a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor, wherein the fourth back gate voltage is adjustable;
• and
• form an output transformer.