Substrate structure, method for forming same, and method for manufacturing nitride semiconductor using same

A semiconductor lamination structure, comprising:

• a single-crystal substrate heterogeneous from a nitride semiconductor;
• a crystallized inorganic thin film having a plurality of leg portions configured to contact the substrate and an upper surface extending from the leg portions and parallel to the substrate so that an integrated cavity is defined between the leg portions, the upper surface, and the substrate, the crystallized inorganic thin film having the same crystal structure as the substrate, and each of the leg portions having a hollow pipe shape;
• and
• a nitride semiconductor layer formed on the inorganic thin film.

A method for forming a substrate structure, comprising:

• forming a hole-type sacrificial layer pattern on a single-crystal substrate which is heterogeneous from a nitride semiconductor;
• forming an inorganic thin film on the sacrificial layer pattern;
• removing the sacrificial layer pattern from the substrate on which the inorganic thin film is formed, so that an integrated cavity surrounding a plurality of hollow pipe shapes is formed and is defined by the substrate and the inorganic thin film;
• and
• crystallizing the inorganic thin film into the same crystal structure as the substrate.