Nitride semiconductor device
AssigneePanasonic Corporation
InventorsRyo Kajitani, Daisuke Shibata, Kenichiro Tanaka, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda
Life of this patent
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Abstract
A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.
Claims11
A nitride semiconductor device, comprising:
- a substrate having a first major surface and a second major surface;
- a first nitride semiconductor layer of a first conductivity type which is disposed on the first major surface and has a protrusion;
- a second nitride semiconductor layer of a second conductivity type disposed on the protrusion;
- a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer;
- and
- a cathode electrode including titanium and disposed under the second major surface, wherein:
- a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface,
- the second nitride semiconductor layer has a plurality of recesses, and
- the plurality of recesses are arranged in a matrix in a plan view of the substrate.
A nitride semiconductor device, comprising:
- a substrate having a first major surface and a second major surface;
- a first nitride semiconductor layer of a first conductivity type which is disposed on the first major surface and has a protrusion;
- a second nitride semiconductor layer of a second conductivity type disposed on the protrusion;
- a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer;
- and
- a cathode electrode including titanium and disposed under the second major surface, wherein:
- a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface, and
- the second nitride semiconductor layer includes a plurality of island structures and encloses the plurality of island structures in a plan view of the substrate.
A nitride semiconductor device, comprising:
- a substrate having a first major surface and a second major surface;
- a first nitride semiconductor layer of a first conductivity type which is disposed on the first major surface and has a protrusion;
- a second nitride semiconductor layer of a second conductivity type disposed on the protrusion;
- a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer;
- a cathode electrode including titanium and disposed under the second major surface;
- and
- a quantum well active layer which is disposed between the first nitride semiconductor layer and the second nitride semiconductor layer and has a quantum level greater than a band gap of the first nitride semiconductor layer,
- wherein a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.
Dependencies are inferred from the claim text.