Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)

An apparatus, comprising:

• a first bottom electrode layer positioned above a substrate in a film thickness direction;
• a first source layer positioned above the first bottom electrode layer in the film thickness direction;
• a first impact ionization channel (i-channel) layer positioned above the first source layer in the film thickness direction;
• a first drain layer positioned above the first i-channel layer in the film thickness direction;
• a first upper electrode layer positioned above the first drain layer in the film thickness direction that forms a first stack that comprises the first bottom electrode layer, the first source layer, the first i-channel layer, the first drain layer, and the first upper electrode layer;
• a first gate layer positioned on sides of the first i-channel layer along a plane perpendicular to the film thickness direction in an element width direction, wherein the first gate layer is positioned closer to the first drain layer than the first source layer;
• a perpendicular magnetic tunnel junction (pMTJ) structure positioned above the first upper electrode layer that is electrically coupled to the first upper electrode layer;
• a second bottom electrode layer positioned above the pMTJ in the film thickness direction that is electrically coupled to the pMTJ;
• a second drain layer positioned above the second bottom electrode layer in the film thickness direction, the second drain layer being electrically coupled to the pMTJ;
• a second i-channel layer positioned above the second drain layer in the film thickness direction;
• a second source layer positioned above the second i-channel layer in the film thickness direction;
• a second upper electrode layer positioned above the second source layer in the film thickness direction that forms a second stack that comprises the second bottom electrode layer, the second drain layer, the second i-channel layer, the second source layer, and the second upper electrode layer;
• and
• a second gate layer positioned on sides of the second i-channel layer along the plane perpendicular to the film thickness direction in the element width direction, wherein the second gate layer is positioned closer to the second drain layer than the second source layer.

An apparatus, comprising:

• a substrate;
• an electrically conductive channel positioned within a portion of the substrate;
• a first impact ionization metal-oxide semiconductor (I-MOS) positioned above the substrate in a film thickness direction, the first I-MOS comprising a first steep slope field-effect transistor (FET), wherein the electrically conductive channel is electrically coupled to the first I-MOS;
• a perpendicular magnetic tunnel junction (pMTJ) structure positioned above the first I-MOS in the film thickness direction, the pMTJ being electrically coupled in series to the first I-MOS;
• and
• a second I-MOS positioned above the pMTJ in the film thickness direction, the second I-MOS comprising a second steep slope FET, wherein the pMTJ is electrically coupled in series to the second I-MOS.