Vapor phase deposition of organic films
AssigneeASM IP Holding B.V.
InventorsViljami J. Pore, Marko Tuominen, Hannu Huotari
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Abstract
Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.
Claims22
A method for reducing the aspect ratio of three-dimensional structures on a semiconductor substrate, comprising:
- vaporizing a first reactant to form a first reactant vapor;
- exposing a semiconductor substrate in a reaction space to the first reactant vapor, the semiconductor substrate comprising a topography with a three-dimensional structure;
- and
- depositing an organic film over the semiconductor substrate preferentially over lower features of the topography compared to higher features of the topography such that the organic film reduces an aspect ratio of the three-dimensional structure on the semiconductor substrate as it deposits, wherein depositing includes exposing the semiconductor substrate to the first reactant vapor.
Dependencies are inferred from the claim text.