Method for creating patterns

A method for creating patterns in a layer to be etched, starting from a stack comprising at least the layer to be etched and a masking layer on top of the layer to be etched, the masking layer having at least one pattern, the method comprising:

• a) modifying at least one zone of the layer to be etched via ion implantation vertically in line with said at least one pattern of said masking layer;
• b) at least one sequence of b1) and b2):
• b1) enlarging said at least one pattern of said masking layer, said masking layer having been preserved after the modification in order to carry out the enlargement, the enlarging being carried out in such a way as to enlarge said at least one pattern in a plane in which the layer to be etched mainly extends;
• b2) modifying at least one zone of the layer to be etched via ion implantation vertically in line with the at least one enlarged pattern of said masking layer, the implantation being carried out over a depth less than the implantation depth of the preceding modification;
• and
• c) removing the modified zones, the removal comprising etching the modified zones selectively with respect to the non-modified zones of the layer to be etched, said etching being wet etching,
• wherein the masking layer is a hard mask or the stack comprises a buffer layer positioned between the masking layer and the layer to be etched and covering the layer to be etched during the implantation.