Multi-junction photoelectric conversion device and photoelectric conversion module

A multi-junction photoelectric conversion device comprising, in the following order from a light-receiving side:

• a first photoelectric conversion unit;
• an intermediate layer having an average refractive index n of 2.6 to 3.5 and a thickness of 40 to 80 nm;
• and
• a second photoelectric conversion unit,
• wherein the first photoelectric conversion unit comprises:
• a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material;
• a first charge transport layer on the light-receiving side of the first light absorbing layer;
• and
• a second charge transport layer on a rear side of the first light absorbing layer,
• wherein the second charge transport layer is in contact with the intermediate layer,
• wherein the second photoelectric conversion unit comprises:
• a second light absorbing layer that is a crystalline silicon substrate;
• and
• a first conductive semiconductor layer that is in contact with the intermediate layer, and
• wherein a refractive index n1 of the second charge transport layer, a refractive index n2 of the first conductive semiconductor layer and an average refractive index n of the intermediate layer satisfy the following relationships:
• n1<n<n2;
• n2−n1≥0.7;
• and
• √(n1×n2)−0.5≤n≤√(n1×n2)+0.5.