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AssigneeToyoda Gosei Co., Ltd.
InventorsMiki Moriyama, Shiro Yamazaki, Yasuhide Yakushi
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To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.
A method for producing a Group III nitride semiconductor comprising growing a Group III nitride semiconductor through a flux method using a molten mixture of an alkali metal and a Group III metal on a seed substrate, wherein a first crucible with a lid is used to hold the seed substrate and the molten mixture, carbon being a graphite which is measured in a predetermined amount is placed on the lid of the first crucible so as not to contact with the molten mixture at start of growth so that a carbon concentration of the molten mixture is made to zero before the start of growth, and the Group III nitride semiconductor is grown on the seed substrate while increasing the carbon concentration of the molten mixture after the start of growth.
A method for producing a Group III nitride semiconductor comprising growing a Group III nitride semiconductor through a flux method using a molten mixture of an alkali metal and a Group III metal on a seed substrate, wherein a first crucible comprising at least one selected from a group consisting of tungsten(W), molybdenum(Mo), boron nitride(BN), alumina, and yttrium aluminum garnet(YAG) is used to hold the seed substrate and the molten mixture, the first crucible is set in a reaction vessel, the reaction vessel is heated by a heating apparatus disposed outside of the reaction vessel, carbon being a graphite which is measured in a predetermined amount is placed at any place in the reaction vessel so as not to contact with the molten mixture at start of growth so that a carbon concentration of the molten mixture is made to zero before the start of growth, and the Group III nitride semiconductor is grown on the seed substrate while increasing the carbon concentration of the molten mixture after the start of growth.
A method for producing a Group III nitride semiconductor comprising growing a Group III nitride semiconductor through a flux method using a molten mixture of an alkali metal and a Group III metal on a seed substrate, wherein carbon is placed so as not to contact with the molten mixture at start of growth so that a carbon concentration of the molten mixture is made to zero before the start of growth, and the Group III nitride semiconductor is grown on the seed substrate while increasing the carbon concentration of the molten mixture after the start of growth, and
A method for producing a Group III nitride semiconductor comprising growing a Group III nitride semiconductor through a flux method using a molten mixture of an alkali metal and a Group III metal on a seed substrate, wherein a first crucible is used to hold the seed substrate and the molten mixture, a second crucible which does not contain the molten mixture but contains carbon being a graphite in an inner space thereof is used, the carbon does not contact with the molten mixture at start of growth so that a carbon concentration of the molten mixture is made to zero before the start of growth, and the Group III nitride semiconductor is grown on the seed substrate while increasing the carbon concentration of the molten mixture after the start of growth.
Dependencies are inferred from the claim text.