Deposition method
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing Interational (Beijing) Corporation
InventorsJian Fei Shen, Yang Wang
Life of this patent
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Abstract
A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.
Claims9
A deposition method, comprising:
- conducting a first deposition in a reaction chamber at a first deposition temperature;
- conducting a cool-down process on the reaction chamber, and a second deposition during the cool-down process, comprising:
- cooling down the reaction chamber until the temperature in the reaction chamber is lowered to a second deposition temperature;
- maintaining the temperature in the reaction chamber at the second deposition temperature for a pre-determined time;
- and
- conducting the second deposition at the same time that the temperature is being lowered to the second deposition temperature and also while the temperature is maintained at the second deposition temperature.
Dependencies are inferred from the claim text.