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US 10,329,661 B2Granted
Cu—Ga—In—Na target
AssigneePlansee SE
InventorsChristian Linke, Jiehua Li, Peter Schumacher, Wolfram Knabl, Gerhard Leichtfried
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Abstract
A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.
Claims9
A sputtering target, comprising an alloy consisting of 5 to 70 at % of at least one element selected from the group consisting of Ga and In, and 0.1 to 15 at % of Na, and a remainder Cu and impurities, and the sputtering target containing at least one Na-containing intermetallic phase.
Dependencies are inferred from the claim text.