Chemical mechanical planarization slurry and method for forming same
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsIan T. Sines, Angela Kwapong, Carlijn L. Mulder, Douglas E. Ward, Vianney Le Roux
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Abstract
A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.
Claims19
A CMP slurry comprising:
- a carrier;
- a particulate material within the carrier comprising an alumina-containing material, wherein the alumina-containing material comprises a majority content of alpha alumina and a transition phase alumina at a content of at least 0.5 wt. % and not greater than 20 wt. % for a total weight of the particulate material;
- an oxidizer comprising at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof;
- and
- a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.
Dependencies are inferred from the claim text.