Dielectric thin film, capacitor element, and electronic component
AssigneeTDK Corporation
InventorsKumiko Yamazaki, Isao Nakahata
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Abstract
A dielectric thin film with high relative permittivity and high insulation can establish the amount of nitrogen in a metal oxynitride to be low. A dielectric thin film, wherein the dielectric composition is a metal oxynitride solid solution including Ma and Mb: a composition represented by the chemical formula MazMbOxNy (Ma is one element selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one element selected from Ta, Nb, Ti and W, O is oxygen, and N is nitrogen); when a is the ionic valence exhibited when Ma occupies an A site in the perovskite structure and b is the ionic valence exhibited when Mb occupies a B site in the perovskite structure, a and b are 6.7≤a+b≤7.3, and x, y and z are 0.8≤z≤1.2, 2.450≤x≤3.493, and 0.005≤y≤0.700.
Claims18
A dielectric thin film consisting of a dielectric composition containing a dielectric having a perovskite structure, wherein
- the dielectric composition has a composition represented by a chemical formula of MazMbOxNy (Ma is one or more elements selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one or more elements selected from Ta, Nb, Ti, and W, O is oxygen, and N is nitrogen),
- a relation of 6.7≤a+b≤7.3 is satisfied, where a is an ionic valence when Ma occupies an A site of the perovskite structure, and b is an ionic valence when Mb occupies a B site of the perovskite structure,
- x, y, and z of the chemical formula satisfy 0.8≤z≤1.2, 2.450≤x≤3.493, and 0.005≤y≤0.700,
- the dielectric composition is a metal oxynitride solid solution containing Ma and Mb, and
- a specific resistance of the dielectric thin film is 1010 Ωcm or more.
A dielectric thin film consisting of a dielectric composition containing a dielectric having a perovskite structure, wherein
- the dielectric composition has a composition represented by a chemical formula of MazMbOxNy (Ma is one or more elements selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one or more elements selected from Ta, Nb, Ti, and W, O is oxygen, and N is nitrogen),
- a relation of 6.7≤a+b≤7.3 is satisfied, where a is an ionic valence when Ma occupies an A site of the perovskite structure, and b is an ionic valence when Mb occupies a B site of the perovskite structure,
- x, y, and z of the chemical formula satisfy 0.8≤z≤1.2, 2.450≤x≤3.493, and 0.005≤y≤0.700,
- a peak intensity of a maximum intensity among peak intensities of diffracted X-rays not attributed to the perovskite structure is 0 or more and 10 or less when a peak intensity of a maximum intensity among peak intensities of diffracted X-rays attributed to the perovskite structure is 100 in an X-ray diffraction pattern of the dielectric thin film, and
- a specific resistance of the dielectric thin film is 1010 Ωcm or more.
A dielectric thin film comprising a perovskite structure represented by a chemical formula of MazMbOxNy (Ma is a metal ion located in an A site of the perovskite structure, Mb is a metal ion located in a B site of the perovskite structure, O is oxygen ion, and N is nitrogen ion), wherein
- a relation of a+b=7.0 is satisfied, where a and b are respectively an average valence of Ma and Mb,
- x, y, and z of the chemical formula satisfy 0.8≤z≤1.2, 2.450≤x≤3.493, and 0.005≤y≤0.700,
- the dielectric thin film is composed of a solid solution between a metal oxide composed of Ma and Mb and a metal oxynitride composed of Ma and Mb, and
- a specific resistance of the dielectric thin film is 1010 Ωcm or more.
Dependencies are inferred from the claim text.