Semiconductor device, pressure sensor, microphone, and acceleration sensor
AssigneeInfineon Technologies AG
InventorsMarco Haubold, Henning Feick, Kerstin Kaemmer
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.
Claims20
A semiconductor device, comprising:
- at least one suspension region of a membrane structure, wherein the suspension region lies laterally in a first region of a surface of a semiconductor substrate;
- and
- a membrane region of the membrane structure, wherein a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate,
- wherein the first region of the surface of the semiconductor substrate is formed by and corresponds to a surface of a shielding doping region of the semiconductor substrate, wherein the shielding doping region of the semiconductor substrate adjoins an adjacent doping region, wherein the adjacent doping region forms at least one part of the surface of the semiconductor substrate in the region of the cavity, and wherein the adjacent doping region has a first conductivity type and the shielding doping region has a second conductivity type opposite the first conductivity type.
A semiconductor device, comprising:
- at least one suspension region of a membrane structure, wherein the suspension region lies laterally in a first region of a surface of a semiconductor substrate, and wherein an insulation layer is arranged vertically between the suspension region of the membrane structure and the first region of the surface of the semiconductor substrate;
- and
- a membrane region of the membrane structure, wherein a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate,
- wherein a maximum vertical distance between points at an edge area of the cavity that faces the semiconductor substrate is less than 10 nm.
A semiconductor device, comprising:
- at least one suspension region of a membrane structure, wherein the suspension region lies laterally in a first region of a surface of a semiconductor substrate;
- a membrane region of the membrane structure, wherein a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, wherein the suspension region laterally delimits the cavity;
- and
- an insulation layer arranged at a surface of the at least one part of the semiconductor substrate under the membrane structure and the cavity, wherein the insulation layer has a lateral extent limited to the cavity.
Dependencies are inferred from the claim text.