# US 10,320,350 B1 · System and method for bypassing a low noise amplifier

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- Number: US 10,320,350 B1
- Document ID: US10320350B1
- Status: Granted
- Kind: B1
- Application number: 15/937,163
- Filed: 2018-03-27
- Granted: 2019-06-11
- Earliest claimed: 2018-03-27
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Thomas Leitner; Daniel Schroegendorfer; Hans-Dieter Wohlmuth
- Web page: https://patentgrep.com/patent/US10320350B1

## CPC

- H03F 3/72: Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F 3/195: in integrated circuits
- H03F 2200/294: the amplifier being a low noise amplifier [LNA]
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H03F 2203/7239: the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
- H03F: AMPLIFIERS

## Abstract

In accordance with an embodiment, a radio frequency (RF) amplifier circuit includes a switchable capacitance circuit having a first terminal configured to be coupled to an input matching inductor. The switchable capacitance circuit is configured to provide a short circuit between the first and second terminals in a first state, and provide a first capacitive impedance between the first and second terminals in a second state. The RF amplifier also includes a low noise amplifier (LNA) having an input terminal coupled to the second terminal of the switchable capacitance circuit; and a bypass switch coupled to an output of the LNA, the second terminal of the switchable capacitance circuit, and an output of the RF amplifier circuit. The bypass switch is configured to select the output of LNA in the first state, and select the second terminal of the switchable capacitance circuit in the second state.

## Claims

### Claim 1

A radio frequency (RF) amplifier circuit comprising:
a switchable capacitance circuit having a first terminal configured to be coupled to an input matching inductor, the switchable capacitance circuit configured to:
provide a short circuit between the first terminal and a second terminal in a first state, and
provide a first capacitive impedance between the first terminal and the second terminal in a second state;
a low noise amplifier (LNA) having an input terminal coupled to the second terminal of the switchable capacitance circuit; and
a bypass switch having a first input terminal coupled to an output of the LNA, a second input terminal coupled to the second terminal of the switchable capacitance circuit, and an output terminal coupled to an output of the RF amplifier circuit, the bypass switch configured to select the output of LNA in the first state, and select the second terminal of the switchable capacitance circuit in the second state.

### Claim 2 (depends on 1)

The RF amplifier of claim 1, wherein the switchable capacitance circuit comprises a capacitor coupled in parallel with a switch.

### Claim 3 (depends on 1)

The RF amplifier of claim 1, wherein the switchable capacitance circuit comprises a transistor configured to be on in the first state and off in the second state, wherein parasitic capacitances of the transistor provide the first capacitive impedance in the second state.

### Claim 4 (depends on 1)

The RF amplifier of claim 1, wherein the bypass switch comprises:
a first switch coupled between the output of the LNA and the output of the RF amplifier circuit;
a second switch coupled between the second terminal of the switchable capacitance circuit and the output of the RF amplifier circuit; and
a T-switch coupled between the second terminal of the switchable capacitance circuit and the second switch.

### Claim 5 (depends on 4)

The RF amplifier of claim 4, further comprising a matching network coupled between the T-switch and the second switch.

### Claim 6 (depends on 1)

The RF amplifier of claim 1, further comprising the matching inductor.

### Claim 7 (depends on 1)

The RF amplifier of claim 1, wherein the switchable capacitance circuit, the LNA and the bypass switch are disposed on a single semiconductor substrate.

### Claim 8 (depends on 1)

The RF amplifier of claim 1, wherein the first capacitive impedance is configured to provide an RF match in the second state.

### Claim 9 (depends on 1)

The RF amplifier of claim 1, wherein the LNA is configured to be turned-off in the second state.