# US 10,320,335 B1 · Compact doherty power amplifier using non-uniform phase match devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,320,335 B1 - Document ID: US10320335B1 - Status: Granted - Kind: B1 - Application number: 15/962,672 - Filed: 2018-04-25 - Granted: 2019-06-11 - Earliest claimed: 2018-04-25 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Haedong Jang; Bjoern Herrmann; Zulhazmi Mokhti; Richard Wilson - Web page: https://patentgrep.com/patent/US10320335B1 ## CPC - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 1/565: {using inductive elements} - H03F 3/193: with field-effect devices (H03F3/195 takes precedence) - H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H03F 2200/267: A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/423: Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F 2200/541: Transformer coupled at the output of an amplifier - H03F 2203/21139: An impedance adaptation circuit being added at the output of a power amplifier stage - H10W 44/206: {Wires} - H10W 44/216: {Waveguides, e.g. strip lines} - H10W 44/234: {Arrangements for impedance matching} - H10W 44/241: {for passive devices or passive elements} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL} - H10W 90/759: {between a chip and a laterally-adjacent discrete passive device} - H03F: AMPLIFIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An RF amplifier includes an amplifier chip on a flange having an input and an output comprising a parasitic capacitance and a parasitic inductance, a first chip capacitor coupled to the output of the output of the amplifier by a first plurality of bond wires, and a second chip capacitor coupled to the first chip capacitor by a second plurality of bond wires, and an output impedance matching network having an input coupled to the output of the second chip capacitor by a third plurality of bond wires, and an output, and a phase shift between the input and the output of less than 90 degrees, wherein the phase shift from the output of the amplifier chip to the output of the output impedance matching network is 180 degrees. ## Claims ### Claim 1 A two-way Doherty amplifier comprising: a first amplifier having an input and an output comprising a parasitic capacitance and a parasitic inductance; a first output impedance matching network having an input coupled to the output of the first amplifier, and an output, and a phase shift between the input and the output of less than 90 degrees; a second amplifier having an input and an output comprising a parasitic capacitance and a parasitic inductance; a second output impedance matching network having an input and an output, and a phase shift between the input and the output of less than 90 degrees; a chip capacitor coupled to the output of the second amplifier by at least one first bond wire, and to the input of the second output impedance matching network by at least one second bond wire; and an impedance transformer having an input coupled to the output of the first output impedance matching network and to the output of the second output impedance matching network, and an output. ### Claim 2 (depends on 1) The two-way Doherty amplifier of claim 1, comprising a phase shift of 90 degrees between the first amplifier output and the input of the impedance transformer. ### Claim 3 (depends on 1) The two-way Doherty amplifier of claim 1, comprising a phase shift of 180 degrees between the second amplifier output and the input of the impedance transformer. ### Claim 4 (depends on 1) The two-way Doherty amplifier of claim 1, wherein the chip capacitor comprises a plurality of chip capacitors coupled together with a least one third bond wire. ### Claim 5 (depends on 1) The two-way Doherty amplifier of claim 1, wherein the at least one first bond wire comprises a plurality of bond wires. ### Claim 6 (depends on 1) The two-way Doherty amplifier of claim 1, wherein the at least one second bond wire comprises a plurality of bond wires. ### Claim 7 (depends on 1) The two-way Doherty amplifier of claim 1, wherein a first input signal associated with the first amplifier input is phase shifted from a second input signal associated with the second amplifier input. ### Claim 8 A three-way Doherty amplifier comprising: a first amplifier having an input and an output comprising a parasitic capacitance and a parasitic inductance; a first output impedance matching network having an input coupled to the output of the first amplifier, and an output, and a phase shift between the input and the output of less than 90 degrees; a second amplifier having an input and an output comprising a parasitic capacitance and a parasitic inductance; a second output impedance matching network having an input and an output, and a phase shift between the input and the output of less than 90 degrees; a third amplifier having an input and an output comprising a parasitic capacitance and a parasitic inductance; a third output impedance matching network having an input and an output, and a phase shift between the input and the output of less than 90 degrees; a first chip capacitor coupled to the output of the second amplifier by at least one first bond wire, and to the input of the second output impedance matching network by at least one second bond wire; and a second chip capacitor coupled to the output of the third amplifier by at least one third bond wire, and to the input of the second output impedance matching network by at least one fourth bond wire; a quarter wavelength impedance transformer having an input coupled to the output of the second output impedance matching network, and an output coupled to the output of the third output impedance matching network; and an output impedance transformer having an input coupled to the output of the third output impedance matching network and the output of the quarter wavelength impedance transformer, and an output. ### Claim 9 (depends on 8) The three-way Doherty amplifier of claim 8, comprising a phase shift of 90 degrees between the first amplifier output and the input of the quarter wavelength impedance transformer. ### Claim 10 (depends on 8) The three-way Doherty amplifier of claim 8, comprising a phase shift of 180 degrees between the second amplifier output and the input of the quarter wavelength impedance transformer. ### Claim 11 (depends on 8) The three-way Doherty amplifier of claim 8, comprising a phase shift of 180 degrees between the third amplifier output and the input of the output impedance transformer. ### Claim 12 (depends on 8) The three-way Doherty amplifier of claim 8, wherein at least one of the first and second chip capacitors comprises a plurality of chip capacitors coupled together with a least one fifth bond wire. ### Claim 13 (depends on 8) The three-way Doherty amplifier of claim 8, wherein the at least one first bond wire and the at least one second bond wire each comprise a plurality of bond wires. ### Claim 14 (depends on 8) The three-way Doherty amplifier of claim 8, wherein the at least one third bond wire and the at least one fourth bond wire each comprise a plurality of bond wires. ### Claim 15 (depends on 8) The three-way Doherty amplifier of claim 8, wherein a first input signal associated with the first amplifier input is phase shifted from a second input signal associated with the second amplifier input. ### Claim 16 (depends on 8) The three-way Doherty amplifier of claim 8, wherein a first input signal associated with the first amplifier input is phase shifted from a third input signal associated with the third amplifier input. ### Claim 17 An RF amplifier comprising: an amplifier chip on a flange having an input and an output comprising a parasitic capacitance and a parasitic inductance; a first chip capacitor coupled to the output of the output of the amplifier chip by a first plurality of bond wires; and a second chip capacitor coupled to the first chip capacitor by a second plurality of bond wires; and an output impedance matching network having an input coupled to the output of the second chip capacitor by a third plurality of bond wires, and an output, and a phase shift between the input and the output of less than 90 degrees, wherein the phase shift from the output of the amplifier chip to the output of the output impedance matching network is 180 degrees. ### Claim 18 (depends on 17) The RF amplifier of claim 17, wherein the output impedance matching network comprises a transmission line. ### Claim 19 (depends on 17) The RF amplifier of claim 17, wherein the input of the amplifier chip is coupled to a conductive gate portion proximate to and electrically isolated from the flange. ### Claim 20 (depends on 17) The RF amplifier of claim 17, wherein the output of the amplifier chip is coupled to a conductive drain portion proximate to and electrically isolated from the flange.