# US 10,320,150 B2 · Optical semiconductor apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,320,150 B2 - Document ID: US10320150B2 - Status: Granted - Kind: B2 - Application number: 15/420,843 - Filed: 2017-01-31 - Published: 2017-05-18 - Granted: 2019-06-11 - Earliest claimed: 2015-08-18 - Assignees: Furukawa Electric Co., Ltd. - Applicants: Furukawa Electric Co., Ltd. - Inventors: Toshihito Suzuki; Kazuaki Kiyota; Tatsuro Kurobe - Web page: https://patentgrep.com/patent/US10320150B2 ## CPC - H01S 5/1228: {DFB lasers with a complex coupled grating, e.g. gain or loss coupling} - H01S 5/0268: {Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"} - H01S 5/0612: {controlled by temperature} - H01S 5/068: Stabilisation of laser output parameters (H01S5/0625 takes precedence) - H01S 5/12: the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) - H01S 5/4012: {Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms} - H01S 5/4087: {emitting more than one wavelength} - H01S 5/02251: using optical fibres - H01S 5/227: Buried mesa structure {; Striped active layer} - H01S 5/50: Amplifier structures not provided for in groups H01S5/02 - H01S5/30 - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating. ## Claims ### Claim 1 An optical semiconductor apparatus comprising: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point, the arrayed waveguide grating being configured to: (i) combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and (ii) combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating, wherein a first laser light beam having a longest wavelength and a second laser light beam having a shortest wavelength among the laser light beams radiating from the semiconductor laser devices are incident onto a portion of the arrayed waveguide grating, the portion excluding edge portions of the arrayed waveguide grating in a width direction of an input facet of the arrayed waveguide grating. ### Claim 2 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein the arrayed waveguide grating includes an input slab waveguide, each of the laser light beams from the semiconductor laser devices belonging to the first group is guided to an input facet of the input slab waveguide through a first input waveguide group, each of the laser light beams from the semiconductor laser devices belonging to the second group is guided to the input facet of the input slab waveguide through a second input waveguide group, and input waveguides belonging to the first and second input waveguide groups are arranged in order of wavelengths of laser light beams guided respectively by the input waveguides on the input facet in the groups. ### Claim 3 (depends on 2) The optical semiconductor apparatus according to claim 2, wherein the first and second input waveguide groups are arranged side by side on the input facet of the input slab waveguide, and two input waveguides belonging respectively to the groups are arranged across a boundary in an opposite order to an order of wavelengths of the input waveguides. ### Claim 4 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein the arrayed waveguide grating is configured such that a loss until the laser light beams of the semiconductor laser devices are combined into the same point is lower at edges than a center side of a wavelength bandwidth configured by the laser light beams. ### Claim 5 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein a range between the longest and shortest wavelengths among emission wavelengths of the semiconductor laser devices is substantially same as a free spectral range of the arrayed waveguide grating. ### Claim 6 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein a point different from an order of emission wavelengths of the semiconductor laser devices is set to reduce a difference in output optical power over an entire emission wavelength bandwidth. ### Claim 7 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein the semiconductor laser devices and the arrayed waveguide grating are integrated in a same semiconductor optical integrated device. ### Claim 8 (depends on 7) The optical semiconductor apparatus according to claim 7, further comprising input waveguides provided between the arrayed waveguide grating and the semiconductor laser devices of the first and second groups such that the arrayed waveguide grating is connected to the semiconductor laser devices of the first and second groups, wherein in the semiconductor optical integrated device, the semiconductor laser devices, the input waveguides, and the arrayed waveguide grating are integrated on a same substrate. ### Claim 9 (depends on 7) The optical semiconductor apparatus according to claim 7, wherein the semiconductor laser devices and the arrayed waveguide grating are formed on different substrates, and are optically connected via the input waveguides to be integrated in the semiconductor optical integrated device. ### Claim 10 (depends on 7) The optical semiconductor apparatus according to claim 7, wherein an optical waveguide functional device is further integrated in the semiconductor optical integrated device. ### Claim 11 (depends on 7) The optical semiconductor apparatus according to claim 7, further comprising an optical waveguide functional device to which the laser light radiating from the semiconductor optical integrated device is coupled. ### Claim 12 (depends on 10) The optical semiconductor apparatus according to claim 10, wherein the optical waveguide functional device includes a semiconductor optical amplifier. ### Claim 13 (depends on 12) The optical semiconductor apparatus according to claim 12, wherein a central wavelength of the arrayed waveguide grating is substantially equal to a wavelength providing a minimum value of gain of the semiconductor optical amplifier among the emission wavelengths of the semiconductor laser array. ### Claim 14 (depends on 1) The optical semiconductor apparatus according to claim 1, wherein the optical semiconductor apparatus is a wavelength-tunable laser light source. ### Claim 15 An optical semiconductor apparatus comprising: semiconductor laser devices having different emission wavelengths; an arrayed waveguide grating configured to receive laser light beams radiating from the semiconductor laser devices from an input facet of an input slab waveguide of the arrayed waveguide grating, and to output the laser light beams from a same point on an output facet of an output slab waveguide of the arrayed waveguide grating; and input waveguides configured to guide corresponding ones of the laser light beams from the semiconductor laser devices to the input facet of the input slab waveguide of the arrayed waveguide grating, wherein there is at least one point where an arrangement order of the input waveguides in a width direction on the input facet is inverted with respect to an order of magnitudes of wavelengths of the laser light beams guided respectively by the input waveguides. ### Claim 16 (depends on 15) The optical semiconductor apparatus according to claim 15, wherein at least some of the laser light beams radiating from the semiconductor laser devices are combined by using diffraction phenomena in different diffraction orders in the arrayed waveguide grating. ### Claim 17 (depends on 15) The optical semiconductor apparatus according to claim 15, wherein among the input waveguides, the input waveguides that guide laser light of the shortest wavelength and the longest wavelength are adjacent on the input facet of the input slab waveguide. ### Claim 18 (depends on 17) The optical semiconductor apparatus according to claim 17, wherein among the emission wavelengths of the semiconductor laser devices, the shortest and longest wavelengths are substantially equal to central wavelengths of free spectral ranges corresponding to adjacent diffraction orders in the arrayed waveguide grating.