# US 10,319,934 B2 · Transparent supported electrode for OLED

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- Number: US 10,319,934 B2
- Document ID: US10319934B2
- Status: Granted
- Kind: B2
- Application number: 15/305,529
- Filed: 2015-04-20
- Published: 2017-02-09
- Granted: 2019-06-11
- Earliest claimed: 2014-04-22
- Assignees: Saint-Gobain Glass France
- Applicants: Saint-Gobain Glass France
- Inventors: Youngseong Lee; Jinwoo Han
- Web page: https://patentgrep.com/patent/US10319934B2

## CPC

- H10K 71/60: Forming conductive regions or layers, e.g. electrodes
- C03C 17/04: by fritting glass powder
- C23C 14/086: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}
- C23C 16/403: {of aluminium, magnesium or beryllium}
- C23C 28/04: only coatings of inorganic non-metallic material
- H10K 50/814: combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
- H10K 50/854: comprising scattering means
- H10K 77/10: Substrates, e.g. flexible substrates
- H10K 2102/102: {comprising tin oxides, e.g. fluorine-doped SnO2}
- H10K 2102/351: {Thickness}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A supported transparent electrode for an OLED, includes, in succession: (i) a transparent substrate made of mineral glass; (ii) a scattering layer formed from a high-index enamel containing at least 30% by weight Bi2O3; (iii) a barrier layer of at least one dielectric metal oxide chosen from the group consisting of Al2O3, TiO2, ZrO2 and HfO2, deposited by ALD; and (iv) a layer of a transparent conductive oxide (TCO).

## Claims

### Claim 1

Supported transparent electrode for an OLED, comprising, in succession:
(i) a transparent substrate made of mineral glass;
(ii) a scattering layer formed from a high-index enamel containing at least 30% by weight Bi2O3;
(iii) a barrier layer of at least one dielectric metal oxide chosen from the group consisting of Al2O3, TiO2, ZrO2 and HfO2, deposited by ALD; and
(iv) a layer of a transparent conductive oxide (TCO),
wherein the barrier layer deposited by ALD comprises a plurality of Al2O3 layers in alternation with layers of oxides of higher indices (n>2) chosen from TiO2, ZrO2, and HfO2.

### Claim 2 (depends on 1)

The electrode according to claim 1, further comprising a metal grid under or over the TCO layer and making direct contact therewith.

### Claim 3 (depends on 1)

The electrode according to claim 1, wherein the barrier layer deposited by ALD is comprised between 5 and 200 nm in thickness.

### Claim 4 (depends on 3)

The electrode according to claim 3, wherein the barrier layer deposited by ALD is comprised between 10 and 100 nm in thickness.

### Claim 5 (depends on 1)

The electrode according to claim 1, wherein the high-index enamel forming the scattering layer contains elements that scatter light, dispersed through the thickness of the layer.

### Claim 6 (depends on 1)

The electrode according to claim 1, wherein the interface between the high-index enamel and the underlying transparent substrate made of mineral glass has a roughness profile with an arithmetic mean deviation Ra at least equal to 0.1 μm.

### Claim 7 (depends on 6)

The electrode according to claim 6, wherein the arithmetic mean deviation Ra is comprised between 0.2 and 5 μm.

### Claim 8 (depends on 7)

The electrode according to claim 7, wherein the arithmetic mean deviation Ra is comprised between 0.3 and 3 μm.

### Claim 9 (depends on 1)

OLED comprising an electrode according to claim 1.

### Claim 10

Process for manufacturing a supported transparent electrode for an OLED, comprising the following successive steps:
(a) providing a transparent substrate made of mineral glass bearing, on one of its faces, a scattering layer formed from a high-index enamel containing at least 30% by weight Bi2O3;
(b) forming, by atomic layer deposition (ALD), a dielectric metal oxide barrier layer that comprises a plurality of Al2O3 layers in alternation with layers of oxides of higher indices (n>2) chosen from TiO2, ZrO2, and HfO2 on the high-index enamel layer, said dielectric metal oxide barrier layer making direct contact with the high-index enamel layer; and
(c) forming a layer of a transparent conductive oxide (TCO) on the dielectric metal oxide barrier layer.

### Claim 11 (depends on 9)

The process according to claim 9, further comprising a step (d) of forming a metal grid making direct contact with the transparent conductive oxide layer, this the step (d) comprising at least one step of acid etching.

### Claim 12 (depends on 8)

The process according to claim 8, wherein the step (d) is carried out after step (b) and before step (c) so that the metal grid makes contact both with the dielectric metal oxide barrier layer and with the TCO layer.

### Claim 13 (depends on 8)

The process according to claim 8, wherein the step (d) is carried out after step (c) so that the metal grid makes contact with the TCO layer but not with the dielectric metal oxide barrier layer.