# US 10,319,927 B2 · End-bonded metal contacts on carbon nanotubes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,927 B2 - Document ID: US10319927B2 - Status: Granted - Kind: B2 - Application number: 14/951,847 - Filed: 2015-11-25 - Published: 2017-05-11 - Granted: 2019-06-11 - Earliest claimed: 2015-11-05 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Qing Cao; Shu-Jen Han; Jianshi Tang - Web page: https://patentgrep.com/patent/US10319927B2 ## CPC - H10K 10/84: Ohmic electrodes, e.g. source or drain electrodes - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - H10K 71/60: Forming conductive regions or layers, e.g. electrodes - H10K 85/221: {Carbon nanotubes} - H10K 10/484: {characterised by the channel regions} - H10K 2102/00: Constructional details relating to the organic devices covered by this subclass - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer. ## Claims ### Claim 1 A method of forming an end-bonded contact on a semiconductor, comprising: forming a dielectric layer on a substrate; depositing a carbon nanotube layer onto the dielectric layer; depositing a resist mask onto the carbon nanotube layer; patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed; depositing a contact metal onto the carbon nanotube layer such that a portion of the contact metal directly contacts the exposed carbon nanotube layer; and annealing the device such that a portion of the carbon nanotube layer dissolves into the contact metal forming an end-bonded contact, wherein the end-bonded contact is in direct physical contact with the dielectric layer and contacts the carbon nanotube layer at a single contact interface surface between the end-bonded contact and the carbon nanotube layer, and wherein annealing consists of thermally annealing. ### Claim 2 (depends on 1) The method of claim 1, wherein thermally annealing the device comprises heating the device at a temperature of less than about 1000° C. ### Claim 3 (depends on 1) The method of claim 1, wherein thermally annealing the device comprises heating the device at a temperature of between about 400° C. and about 600° C. ### Claim 4 (depends on 1) The method of claim 1, wherein thermally annealing the device comprises heating the device at a temperature of about 600° C. ### Claim 5 (depends on 1) The method of claim 1, wherein thermally annealing the device comprises heating the device at a temperature of about 400° C. ### Claim 6 (depends on 1) The method of claim 1, wherein the contact metal is any of nickel, cobalt, iron, copper, gold, silver, ruthenium, palladium, platinum, iridium, and any mixtures or alloys thereof. ### Claim 7 (depends on 1) The method of claim 1, wherein the contact metal is nickel. ### Claim 8 (depends on 1) The method of claim 1, wherein the contact metal is cobalt. ### Claim 9 (depends on 1) The method of claim 1, wherein the resist mask is polymethyl methacrylate. ### Claim 10 (depends on 1) The method of claim 1, wherein patterning the resist mask comprises using electron beam lithography. ### Claim 11 A method of forming an end-bonded contact on a semiconductor device, comprising: forming a dielectric layer on a substrate; depositing a carbon nanotube layer onto the dielectric layer; depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed; depositing a contact metal onto the carbon nanotube layer such that the contact metal contacts the exposed carbon nanotube layer, the contact metal being a metal that does not form stable carbides at a temperature of less than about 1000° C.; and annealing the device such that a portion of the carbon nanotube layer dissolves into the contact metal forming an end-bonded contact, wherein the end-bonded contact is in direct physical contact with the dielectric layer and contacts the carbon nanotube layer at a single contact interface surface between the end-bonded contact and the carbon nanotube layer, and wherein annealing consists of thermally annealing. ### Claim 12 (depends on 11) The method of claim 11, wherein thermally annealing the device comprises heating the device at a temperature of between about 400° C. and about 600° C. ### Claim 13 (depends on 11) The method of claim 11, wherein thermally annealing the device comprises heating the device at a temperature of about 600° C. ### Claim 14 (depends on 11) The method of claim 11, wherein thermally annealing the device comprises heating the device at a temperature of about 400° C. ### Claim 15 (depends on 11) The method of claim 11, wherein thermally annealing the device comprises heating the device at a temperature sufficient to cause the carbon nanotube layer to dissolve into the contact metal without forming a carbide. ### Claim 16 (depends on 11) The method of claim 11, wherein the contact metal is any of nickel, cobalt, iron, copper, gold, silver, ruthenium, palladium, platinum, iridium, and any mixtures or alloys thereof. ### Claim 17 (depends on 11) The method of claim 11, wherein the contact metal is nickel.