# US 10,319,925 B2 · Manufacturing method of organic thin film transistor

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- Number: US 10,319,925 B2
- Document ID: US10319925B2
- Status: Granted
- Kind: B2
- Application number: 15/544,015
- Filed: 2017-04-28
- Published: 2018-11-22
- Granted: 2019-06-11
- Earliest claimed: 2017-04-14
- Assignees: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicants: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Inventors: Bo Liang; Wei Wang
- Web page: https://patentgrep.com/patent/US10319925B2

## CPC

- H10K 10/484: {characterised by the channel regions}
- H10K 59/125: including organic TFTs [OTFT]
- H10K 71/18: using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
- H10K 85/20: Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K 85/615: {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present application discloses a manufacturing method of an organic thin film transistor, comprising steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with organic solution and heating the graphene layer to form an organic semiconductor nano line on the surface of the graphene layer; and transferring the organic semiconductor nano line on a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by graphene layer. The semiconductor layer having organic thin film transistors are formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed at a time on the surface of the metal substrate with a large area.

## Claims

### Claim 1

A manufacturing method of an organic thin film transistor, comprising steps of:
forming a graphene layer on a surface of a metal substrate;
covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano line-on the surface of the graphene layer; and
transferring the organic semiconductor nano line to a target substrate,
wherein the step of forming a graphene layer on the surface of the metal substrate comprises: depositing methane gas and hydrogen by chemical vapor deposition on the surface of the metal substrate at an ambient temperature of not lower than 1000 Celsius degrees, wherein the metal substrate is a copper substrate; and
wherein a plurality of organic semiconductor nano lines form an organic semiconductor nano line set in a transfer printing manner as transferring the organic semiconductor nano lines.

### Claim 2 (depends on 1)

The manufacturing method of the organic thin film transistor according to claim 1, wherein the transfer printing manner is a roll-to-roll transfer printing or a roll-to-sheet transfer printing.

### Claim 3 (depends on 1)

The manufacturing method of the organic thin film transistor according to claim 1, wherein the organic solution is a mixed solution of 9,10-bis-phenylethynylanthracene and dimethylformamide.

### Claim 4 (depends on 1)

The manufacturing method of the organic thin film transistor according to claim 1, wherein a temperature of heating the graphene layer is not higher than 50 Celsius degrees and a heating time is not less than 48 hours.

### Claim 5 (depends on 1)

The manufacturing method of the organic thin film transistor according to claim 1, wherein the target substrate comprises a gate electrode, a gate insulation layer, a source and a drain, which are sequentially formed and stacked.

### Claim 6 (depends on 5)

The manufacturing method of the organic thin film transistor according to claim 5, wherein after the step of transferring the organic semiconductor nano line on the target substrate, the method further comprises a step of etching the organic semiconductor nano line to form a semiconductor channel.

### Claim 7 (depends on 1)

The manufacturing method of the organic thin film transistor according to claim 1, wherein the target substrate comprises a gate electrode and a gate insulation layer, which are sequentially stacked; and after the step of transferring the organic semiconductor nano line on the target substrate, the method further comprises a step of forming a source and a drain on a side of the organic semiconductor nano line away from the gate insulation layer.

### Claim 8 (depends on 7)

The manufacturing method of the organic thin film transistor according to claim 7, wherein after the step of transferring the organic semiconductor nano line on the target substrate, the method further comprises a step of etching the organic semiconductor nano line to form a semiconductor channel.