# US 10,319,911 B2 · Wiring pattern production method and transistor production method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,911 B2 - Document ID: US10319911B2 - Status: Granted - Kind: B2 - Application number: 15/243,146 - Filed: 2016-08-22 - Published: 2016-12-08 - Granted: 2019-06-11 - Earliest claimed: 2014-02-28 - Assignees: Nikon Corporation - Applicants: Nikon Corporation - Inventors: Shohei Koizumi; Takashi Sugizaki; Yusuke Kawakami - Web page: https://patentgrep.com/patent/US10319911B2 ## CPC - H10K 71/60: Forming conductive regions or layers, e.g. electrodes - C23C 18/1605: {by masking} - C23C 18/204: {Radiation, e.g. UV, laser} - C23C 18/2086: {with use of organic or inorganic compounds other than metals, first} - C23C 18/285: {Sensitising or activating with tin based compound or composition} - C23C 18/32: Coating with nickel, cobalt or mixtures thereof with phosphorus or boron (C23C18/50 takes precedence) - C23C 18/42: Coating with noble metals - C23C 18/54: Contact plating, i.e. electroless electrochemical plating - C23C 18/30: Activating {or accelerating or sensitising with palladium or other noble metal} - H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate} - H10K 10/481: {characterised by the gate conductors} - H10K 10/84: Ohmic electrodes, e.g. source or drain electrodes - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the precursor film, exposing the photoresist layer with a desired pattern of light, exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer, removing a deprotected protecting group, and depositing an electroless plating catalyst on the exposed surface of the plating base film. ## Claims ### Claim 1 A wiring pattern production method comprising: forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, the first formation material being a silane coupling agent having an amino group protected by the protecting group; forming a photoresist layer including a photoresist material on a surface of the precursor film; exposing the photoresist layer with a desired pattern of light; exposing the precursor film with a desired pattern of light to form the plating base film; developing the exposed photoresist layer and removing a deprotected protecting group; and depositing an electroless plating catalyst on the exposed surface of the plating base film. ### Claim 2 (depends on 1) The wiring pattern production method according to claim 1, wherein the exposing of the photoresist layer and the exposing of the precursor film are simultaneously performed. ### Claim 3 (depends on 1) The wiring pattern production method according to claim 1, wherein, after removing the photoresist layer, a remainder of the precursor film is further exposed to light. ### Claim 4 (depends on 1) The wiring pattern production method according to claim 1, wherein the protecting group is an o-nitrobenzyl group or a group having an o-nitrobenzyl skeleton. ### Claim 5 (depends on 1) The wiring pattern production method according to claim 1, wherein the amino group is a group represented by —NH2. ### Claim 6 (depends on 1) The wiring pattern production method according to claim 1, wherein the precursor film includes a group having at least one of a nitrogen atom and a sulfur atom and the group having the at least one of the nitrogen atom and the sulfur atom further includes a second formation material which is not protected by the protecting group. ### Claim 7 (depends on 6) The wiring pattern production method according to claim 6, wherein the second formation material is a silane coupling agent having the group having the at least one of the nitrogen atom and the sulfur atom. ### Claim 8 (depends on 1) The wiring pattern production method according to claim 1, wherein the substrate is made of a nonmetallic material. ### Claim 9 (depends on 8) The wiring pattern production method according to claim 8, wherein the substrate is made of a resin material. ### Claim 10 (depends on 9) The wiring pattern production method according to claim 9, wherein the substrate has flexibility. ### Claim 11 (depends on 1) A transistor production method comprising: forming at least one of a gate electrode, a source electrode, and a drain electrode on a substrate using the wiring pattern production method according to claim 1. ### Claim 12 (depends on 11) The transistor production method according to claim 11, comprising: forming the gate electrode on the substrate; covering the gate electrode to form a layer including an insulator layer; and forming the source electrode and the drain electrode on a surface of the layer including the insulator layer. ### Claim 13 (depends on 11) The transistor production method according to claim 11, comprising: forming the source electrode and the drain electrode on the substrate; covering the source electrode and the drain electrode to form a layer including an insulator layer; and forming the gate electrode on a surface of the layer including the insulator layer. ### Claim 14 A wiring pattern production method comprising: forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group; forming a photoresist layer including a photoresist material on a surface of the precursor film; exposing the photoresist layer with a desired pattern of light; exposing the precursor film with a desired pattern of light to form the plating base film; developing the exposed photoresist layer and removing a deprotected protecting group; and depositing an electroless plating catalyst on the exposed surface of the plating base film, wherein, after removing the photoresist layer, a remainder of the precursor film is further exposed to light. ### Claim 15 A wiring pattern production method comprising: forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group; forming a photoresist layer including a photoresist material on a surface of the precursor film; exposing the photoresist layer with a desired pattern of light; exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer and removing a deprotected protecting group; and depositing an electroless plating catalyst on the exposed surface of the plating base film; wherein the precursor film includes a group having at least one of a nitrogen atom and a sulfur atom and the group having the at least one of the nitrogen atom and the sulfur atom further includes a second formation material which is not protected by the protecting group.