# US 10,319,898 B2 · Resonance circuit with a single crystal capacitor dielectric material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,898 B2 - Document ID: US10319898B2 - Status: Granted - Kind: B2 - Application number: 15/607,210 - Filed: 2017-05-26 - Published: 2017-09-14 - Granted: 2019-06-11 - Earliest claimed: 2014-06-06 - Assignees: Akoustis, Inc. - Applicants: Akoustis, Inc. - Inventors: Jeffrey B. Shealy - Web page: https://patentgrep.com/patent/US10319898B2 ## CPC - H10N 30/074: by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing - H03H 9/02574: {of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate} - H03H 9/174: {Membranes} - H01G 4/08: Inorganic dielectrics - H03H 9/175: {Acoustic mirrors} - Y10T 29/43: Electric condenser making - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material. ## Claims ### Claim 1 A method for fabricating a single crystal acoustic electronic device the method comprising: providing a substrate having a via cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region; forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the via cavity; forming a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity and coupled to the first electrode material through the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2; and forming a second electrode material overlying the single crystal capacitor dielectric material. ### Claim 2 (depends on 1) The method of claim 1 wherein the single crystal capacitor material is selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides. ### Claim 3 (depends on 1) The method of claim 1 wherein the single crystal capacitor material is selected from at least one of a single crystal oxide including a high K dielectric, ZnO, or MgO. ### Claim 4 (depends on 1) The method of claim 1 wherein the single crystal capacitor dielectric material is characterized by a surface region of at least 200 micron by 200 micron. ### Claim 5 (depends on 1) The method of claim 1 wherein the single crystal capacitor dielectric material is configured in a first strain state to compensate to the substrate; wherein the single crystal capacitor dielectric material is deposited overlying the exposed portion of the substrate. ### Claim 6 A method of fabricating a single crystal acoustic electronic device, the method comprising: providing a substrate having a via cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region; forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the via cavity to form a via structure within a portion of the substrate; forming a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity and coupled to the first electrode material through the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2; and forming a second electrode material overlying the single crystal capacitor dielectric material. ### Claim 7 (depends on 6) The method of claim 6 wherein the surface region is configured in an off-set angle. ### Claim 8 (depends on 6) The method of claim 6 further comprising a reflector region configured to the first electrode material. ### Claim 9 (depends on 6) The method of claim 6 further comprising a reflector region configured to the second electrode material; wherein each of the first electrode material and the second electrode material is selected from a refractory metal. ### Claim 10 (depends on 6) The method of claim 6 wherein the each of the first electrode material and the second electrode material is selected from one of tantalum or molybdenum. ### Claim 11 (depends on 6) The method of claim 6 wherein the first electrode material and the single crystal capacitor dielectric material comprises a first interface region substantially free from an oxide bearing material. ### Claim 12 (depends on 6) The method of claim 6 wherein the first electrode material and the single crystal capacitor dielectric material comprises a second interface region substantially free from an oxide bearing material. ### Claim 13 (depends on 6) The method of claim 6 further comprising a nucleation material provided between the single crystal capacitor dielectric material and the first electrode material; and further comprising a capping material provided between the single crystal capacitor dielectric material and the second electrode material. ### Claim 14 (depends on 6) The method of claim 6 wherein the single crystal capacitor dielectric material is characterized by a FWHM of less than one degree; and further comprising a parameter derived from a two port analysis. ### Claim 15 (depends on 6) The method of claim 6 wherein the first electrode material comprises a first electrode structure configured and routed to a vicinity of a plane parallel to a contact region coupled to the second electrode material. ### Claim 16 (depends on 6) The method of claim 6 wherein the surface region of the substrate is bare and exposed crystalline material. ### Claim 17 (depends on 6) The method of claim 6 wherein the single crystal capacitor dielectric is configured to propagate a longitudinal signal at an acoustic velocity of 6000 meters/second and greater; and further comprising a first contact coupled to the first electrode material and a second contact coupled to the second electrode material such that each of the first contact and the second contact are configured in a co-planar arrangement. ### Claim 18 (depends on 6) The method of claim 6 wherein the semiconductor substrate is selected from a silicon, a gallium arsenide, gallium nitride, aluminum nitride, an aluminum oxide, or others. ### Claim 19 A single crystal acoustic electronic device comprising: a substrate, the substrate having a surface region and a backside surface region; a via cavity through a portion of the substrate; a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2; a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity; and a second electrode material overlying the single crystal capacitor dielectric material; a nucleating material overlying the surface region; and a thickness of the single crystal capacitor dielectric overlying the nucleating material. ### Claim 20 (depends on 19) The device of claim 19 wherein the single crystal capacitor material is selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides. ### Claim 21 (depends on 19) The device of claim 19 wherein the single crystal capacitor material is selected from at least one of a single crystal oxide including a high K dielectric, ZnO, or MgO. ### Claim 22 (depends on 19) The device of claim 19 wherein the single crystal capacitor dielectric material is characterized by a surface region of at least 200 micron by 200 micron. ### Claim 23 (depends on 19) The device of claim 19 wherein the single crystal capacitor dielectric material is configured in a first strain state to compensate to the substrate. ### Claim 24 A single crystal acoustic electronic device comprising: a substrate, the substrate having a surface region and a backside surface region; a via cavity through a portion of the substrate; a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2; a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity; and a second electrode material overlying the single crystal capacitor dielectric material. ### Claim 25 A device of fabricating a single crystal acoustic electronic device comprising: a substrate, the substrate having a surface region and a backside surface region; a via cavity through a portion of the substrate; a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2; a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity to form a via structure within a portion of the substrate; and a second electrode material overlying the single crystal capacitor dielectric material. ### Claim 26 (depends on 25) The device of claim 25 wherein the surface region is configured in an off-set angle. ### Claim 27 (depends on 25) The device of claim 25 further comprising a reflector region configured to the first electrode material. ### Claim 28 (depends on 25) The device of claim 25 further comprising a reflector region configured to the second electrode material. ### Claim 29 (depends on 25) The device of claim 25 wherein each of the first electrode material and the second electrode material is selected from a refractory metal. ### Claim 30 (depends on 25) The device of claim 25 wherein the each of the first electrode material and the second electrode material is selected from one of tantalum or molybdenum. ### Claim 31 (depends on 25) The device of claim 25 wherein the first electrode material and the single crystal capacitor dielectric material comprises a first interface region substantially free from an oxide bearing material. ### Claim 32 (depends on 25) The device of claim 25 wherein the first electrode material and the single crystal capacitor dielectric material comprises a second interface region substantially free from an oxide bearing material. ### Claim 33 (depends on 25) The device of claim 25 further comprising a nucleation material provided between the single crystal capacitor dielectric material and the first electrode material. ### Claim 34 (depends on 25) The device of claim 25 further comprising a capping material provided between the single crystal capacitor dielectric material and the second electrode material. ### Claim 35 (depends on 25) The device of claim 25 wherein the single crystal capacitor dielectric material is characterized by a FWHM of less than one degree. ### Claim 36 (depends on 25) The device of claim 25 further comprising a parameter derived from a two port analysis. ### Claim 37 (depends on 25) The device of claim 25 wherein the first electrode material comprises a first electrode structure configured and routed to a vicinity of a plane parallel to a contact region coupled to the second electrode material. ### Claim 38 (depends on 25) The device of claim 25 wherein the surface region of the substrate is bare and exposed crystalline material. ### Claim 39 (depends on 25) The device of claim 25 wherein the single crystal capacitor dielectric is configured to propagate a longitudinal signal at an acoustic velocity of 6000 meters/second and greater. ### Claim 40 (depends on 25) The device of claim 25 wherein the forming of the single crystal capacitor dielectric is deposited at a temperature ranging from 400 Degrees Celsius to 1200 Degrees Celsius. ### Claim 41 (depends on 25) The device of claim 25 wherein the single crystal capacitor dielectric comprising a surface roughness of 2 nm and less, RMS by atomic force microscopy. ### Claim 42 (depends on 25) The device of claim 25 wherein the substrate is selected from a silicon, a gallium arsenide, an aluminum oxide, or others.