# US 10,319,884 B2 · Light emitting diode

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- Number: US 10,319,884 B2
- Document ID: US10319884B2
- Status: Granted
- Kind: B2
- Application number: 15/132,887
- Filed: 2016-04-19
- Published: 2016-08-11
- Granted: 2019-06-11
- Earliest claimed: 2011-09-16
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Seoul Viosys Co., Ltd.
- Inventors: Jong Hyeon Chae; Jong Min Jang; Won Young Roh; Daewoong Suh; Dae Sung Cho; Joon Sup Lee; Kyu Ho Lee; Chi Hyun In
- Web page: https://patentgrep.com/patent/US10319884B2

## CPC

- H10H 20/835: {Reflective materials}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/831: characterised by their shape
- H10H 20/833: Transparent materials
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/8506: {Containers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/032: {of electrodes}
- H10H 20/034: {of coatings}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10W 72/227: {Multiple bumps having different sizes}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.

## Claims

### Claim 1

A light emitting diode, comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer;
a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion configured to be in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer;
a lower insulating layer disposed between the mesa and the current spreading layer as well as the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode; and
an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa,
wherein the first hole of the upper insulating layer exposes a third portion of the current spreading layer that is disposed on a side wall of the mesa with the lower insulating layer disposed between the third portion of the current spreading layer and the side wall of the mesa.

### Claim 2 (depends on 1)

The light emitting diode of claim 1, wherein the first portion of the current spreading layer is configured to be in ohmic-contact along a periphery of the first conductive type semiconductor layer.

### Claim 3 (depends on 1)

The light emitting diode of claim 1, wherein
the upper insulating layer covers the first portion of the current spreading layer and the end portion of the first conductive type semiconductor layer.

### Claim 4 (depends on 3)

The light emitting diode of claim 3, wherein the lower insulating layer covers part of the end portion of the first conductive type semiconductor layer.

### Claim 5 (depends on 1)

The light emitting diode of claim 1, wherein the reflective electrode comprises a reflective metal.

### Claim 6

A light emitting diode, comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer;
a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion configured to be in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer;
a lower insulating layer disposed between the mesa and the current spreading layer as well as the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode;
an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa; and
a first pad disposed on the current spreading layer through the first hole of the upper insulating layer such that the first pad is in ohmic contact with the first portion of the current spreading layer that is disposed on the mesa.

### Claim 7 (depends on 6)

The light emitting diode of claim 6, wherein:
the lower insulating layer comprises a first hole exposing the reflective electrode;
the upper insulating layer comprises a second hole also exposing the reflective electrode; and
the first hole of the lower insulating layer is different in area than the second hole of the upper insulating layer.

### Claim 8 (depends on 7)

The light emitting diode of claim 7, further comprising:
a second pad disposed on the reflective electrode exposed through the first hole of the lower insulating layer and the second hole of the upper insulating layer.

### Claim 9 (depends on 8)

The light emitting diode of claim 8, wherein the reflective electrode comprises a reflective metal layer and a barrier layer covering a top portion and a side portion of the reflective metal layer.

### Claim 10 (depends on 9)

The light emitting diode of claim 9, wherein the reflective electrode further comprises a stress relieving layer disposed between the top portion of the reflective metal layer and the barrier layer.

### Claim 11

A light emitting diode, comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa;
a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising:
a first portion configured to be in ohmic-contact with a first end portion of the first conductive type semiconductor layer;
a second portion configured to be in ohmic-contact with a second end portion of the first conductive type semiconductor layer; and
a third portion configured to be in ohmic-contact with an intermediate portion of the first conductive type semiconductor layer disposed between the first and second end portions, wherein the third portion is disposed between the first and second end portions of the first conductive type semiconductor layer;
an insulation layer disposed on the mesa and covering an edge of the first conductive type semiconductor layer, the insulation layer comprising:
a lower insulating layer disposed between the mesa and the current spreading layer as well as between the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode; and
an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a fourth portion of the current spreading layer that is disposed on an upper portion of the mesa.

### Claim 12 (depends on 11)

The light emitting diode of claim 11, wherein the upper insulating layer covers the first portion and the second portion of the current spreading layer as well as the first end portion and the second end portion of the first conductive type semiconductor layer.

### Claim 13 (depends on 11)

The light emitting diode of claim 11, wherein the lower insulating layer covers a part of the first end portion of the first conductive type semiconductor layer and a part of the second end portion of the first conductive type semiconductor layer.

### Claim 14 (depends on 13)

The light emitting diode of claim 13, wherein the lower insulating layer comprises:
a first hole exposing the reflective electrode disposed on the mesa; and
a second hole exposing the intermediate portion of the first semiconductor layer.

### Claim 15 (depends on 14)

The light emitting diode of claim 14, wherein the upper insulating layer comprises a second hole exposing the reflective electrode, and the first hole of the lower insulating layer is at least different in area than the second hole of the upper insulating layer.

### Claim 16 (depends on 15)

The light emitting diode of claim 15, further comprising:
a second pad disposed on the reflective electrode exposed through the first hole of the lower insulating layer and the second hole of the upper insulating layer.

### Claim 17 (depends on 14)

The light emitting diode of claim 14, further comprising:
a first pad disposed on the current spreading layer through the first hole of the upper insulating layer such that the first pad is in ohmic contact with the second portion of the current spreading layer.

### Claim 18 (depends on 11)

The light emitting diode of claim 11, wherein the reflective electrode comprises a reflective metal layer, and a barrier layer covers a top portion and a side portion of the reflective metal layer.

### Claim 19 (depends on 18)

The light emitting diode of claim 18, wherein of the reflective electrode further comprises a stress relieving layer disposed between the top portion of the reflective metal layer and the barrier layer.