# US 10,319,883 B2 · Semiconductor device and display unit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,883 B2 - Document ID: US10319883B2 - Status: Granted - Kind: B2 - Application number: 15/808,931 - Filed: 2017-11-10 - Published: 2018-06-21 - Granted: 2019-06-11 - Earliest claimed: 2016-12-20 - Assignees: Joled Inc. - Applicants: Joled Inc. - Inventors: Atsuhito Murai; Motohiro Toyota - Web page: https://patentgrep.com/patent/US10319883B2 ## CPC - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/40: characterised by multiple TFTs - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/831: characterised by their shape - H10H 20/832: characterised by their material - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/12: Active-matrix OLED [AMOLED] displays - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode. ## Claims ### Claim 1 A semiconductor device comprising: a substrate; a gate electrode provided on the substrate; an oxide semiconductor film provided on the substrate with the gate electrode being interposed therebetween, the oxide semiconductor film including a channel region that faces the gate electrode and a low-resistance region adjacent to the channel region; a first electrode that contains a constituent material same as a constituent material of the gate electrode, the first electrode having a same thickness as a thickness of the gate electrode; a second electrode having at least a portion that faces the first electrode, the second electrode containing a constituent material same as a constituent material of the oxide semiconductor film; and a third electrode having at least a portion that is provided at a position facing the first electrode with the second electrode being interposed therebetween, the third electrode being electrically coupled to the first electrode and to the low-resistance region. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, further comprising a channel protective film that covers the channel region of the oxide semiconductor film. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein, in a plan view, the channel protective film is provided in inner side of the gate electrode, and is provided to have a width larger than a channel width of the oxide semiconductor film. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, further comprising a source-drain electrode electrically coupled to the low-resistance region of the oxide semiconductor film. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, further comprising: a first insulating film provided between the oxide semiconductor film and the gate electrode; and a second insulating film that contains metal, and is in contact with the low-resistance region of the oxide semiconductor film. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, further comprising a third insulating film that covers the second insulating film, wherein the source-drain electrode is electrically coupled to the low-resistance region of the oxide semiconductor film through a contact hole provided on the third insulating film and the second insulating film. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein the second insulating film and the third insulating film are provided between the second electrode and the third electrode. ### Claim 8 (depends on 5) The semiconductor device according to claim 5, wherein the metal comprises aluminum. ### Claim 9 (depends on 4) The semiconductor device according to claim 4, wherein the source/drain electrode is electrically coupled to the first electrode. ### Claim 10 (depends on 4) The semiconductor device according to claim 4, wherein the source/drain electrode is integral with the first electrode and the third electrode. ### Claim 11 (depends on 4) The semiconductor device of claim 4, wherein the source/drain electrode extends along a sidewall of the low-resistance region. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the second electrode has a same thickness as a thickness of the low-resistance region of the oxide semiconductor film. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, wherein the first electrode, the second electrode, and the third electrode are provided in this order from the substrate. ### Claim 14 A display unit comprising: a semiconductor device; and a display element layer that is provided on the semiconductor device, and includes a plurality of pixels, the semiconductor device including a substrate, a gate electrode provided on the substrate, an oxide semiconductor film provided on the substrate with the gate electrode being interposed therebetween, the oxide semiconductor film including a channel region that faces the gate electrode and a low-resistance region adjacent to the channel region, a first electrode that contains a constituent material same as a constituent material of the gate electrode, the first electrode having a same thickness as a thickness of the gate electrode, a second electrode having at least a portion that faces the first electrode, the second electrode containing a constituent material same as a constituent material of the oxide semiconductor film, a third electrode having at least a portion that is provided at a position facing the first electrode with the second electrode being interposed therebetween, the third electrode being electrically coupled to the first electrode; and a source/drain electrode electrically coupled to the low-resistance region and to the first electrode. ### Claim 15 (depends on 14) The display unit according to claim 14, wherein the semiconductor device includes a pixel circuit of each of the plurality of pixels, the pixel circuit including a driving transistor and a switching transistor, and the gate electrode and the oxide semiconductor film configure the driving transistor in the pixel circuit. ### Claim 16 (depends on 15) The display unit according to claim 15, wherein the second electrode is provided integrally with the oxide semiconductor film. ### Claim 17 (depends on 14) The display unit according to claim 14, wherein the semiconductor device includes a pixel circuit of each of the plurality of pixels, the pixel circuit including a driving transistor and a switching transistor, and the gate electrode and the oxide semiconductor film configure the switching transistor in the pixel circuit. ### Claim 18 (depends on 17) The display unit according to claim 17, wherein the second electrode is provided integrally with the oxide semiconductor film. ### Claim 19 (depends on 14) The semiconductor device of claim 14, wherein the source/drain electrode is integral with the first electrode and the third electrode.