# US 10,319,880 B2 · Display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,880 B2 - Document ID: US10319880B2 - Status: Granted - Kind: B2 - Application number: 15/499,922 - Filed: 2017-04-28 - Published: 2018-06-07 - Granted: 2019-06-11 - Earliest claimed: 2016-12-02 - Assignees: Innolux Corporation - Applicants: Innolux Corporation - Inventors: Kuan-Feng Lee; Yu-Hsien Wu - Web page: https://patentgrep.com/patent/US10319880B2 ## CPC - H10W 90/00: Package configurations - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 86/40: characterised by multiple TFTs - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs} - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous - H10H 20/825: containing nitrogen, e.g. GaN - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A display device is provided. The display device includes a substrate, a first transistor, and a light emitting diode. The first transistor is disposed on the substrate, wherein the first transistor comprises a first semiconductor layer comprising silicon having a first lattice constant. The light emitting diode is disposed on the substrate and electrically connected to the first transistor, wherein the light emitting diode comprises a semiconductor layer comprising gallium nitride having a second lattice constant and a third lattice constant, and the third lattice constant is greater than the second lattice constant. A ratio of the second lattice constant to the first lattice constant is greater than or equal to 0.56 and is less than or equal to 0.68. ## Claims ### Claim 1 A display device, comprising: a substrate, a first transistor disposed on the substrate, wherein the first transistor comprises a first semiconductor layer comprising silicon having a first lattice constant, the first semiconductor layer is in a poly-crystal phase, and a crystal ratio of the first semiconductor layer is in a range from 50% to 73%; a light emitting diode disposed on the substrate and electrically connected to the first transistor, wherein the light emitting diode comprises a semiconductor layer comprising gallium nitride having a second lattice constant and a third lattice constant, and the third lattice constant is greater than the second lattice constant, wherein a ratio of the second lattice constant to the first lattice constant is greater than or equal to 0.56 and is less than or equal to 0.68; and an insulating layer sandwiched between the first transistor and the light emitting diode, wherein the first transistor is located between the insulating layer and the substrate, and the insulating layer covers the first transistor. ### Claim 2 (depends on 1) The display device according to claim 1, wherein the ratio of the second lattice constant to the first lattice constant is greater than or equal to 0.57 and is less than or equal to 0.61. ### Claim 3 (depends on 1) The display device according to claim 1, wherein an atomic percentage of silicon comprised in the first semiconductor layer of the first transistor is greater than an atomic percentage of gallium comprised in the semiconductor layer of the light emitting diode. ### Claim 4 (depends on 1) The display device according to claim 1, wherein the light emitting diode is a blue light emitting diode. ### Claim 5 (depends on 1) The display device according to claim 1, wherein a ratio of the third lattice constant to the first lattice constant is greater than or equal to 0.92 and is less than or equal to 1.10. ### Claim 6 (depends on 5) The display device according to claim 5, wherein the ratio of the third lattice constant to the first lattice constant is greater than or equal to 0.94 and is less than or equal to 0.99. ### Claim 7 (depends on 1) The display device according to claim 1, further comprising a second transistor disposed on the substrate, wherein the second transistor comprises a second semiconductor layer comprising gallium and oxygen. ### Claim 8 (depends on 7) The display device according to claim 7, wherein the second transistor is electrically connected to the light emitting diode. ### Claim 9 (depends on 7) The display device according to claim 7, wherein a ratio of an atomic percentage of gallium comprised in the second semiconductor layer of the second transistor to an atomic percentage of gallium comprised in the semiconductor layer of the light emitting diode is greater than or equal to 0.26 and is less than or equal to 0.55. ### Claim 10 A display device, comprising: a substrate, a first transistor disposed on the substrate, wherein the first transistor comprises a first semiconductor layer comprising silicon; a second transistor disposed on the substrate, wherein the second transistor comprises a second semiconductor layer comprising gallium and oxygen, and a crystal ratio of the second semiconductor layer is less than 50%; and a blue light emitting diode disposed on the substrate and electrically connected to the first transistor and the second transistor, wherein the blue light emitting diode comprises a semiconductor layer comprising gallium nitride, wherein a ratio of an atomic percentage of gallium comprised in the second semiconductor layer of the second transistor to an atomic percentage of gallium comprised in the semiconductor layer of the blue light emitting diode is greater than or equal to 0.26 and is less than or equal to 0.55, wherein the atomic percentage of gallium comprised in the second semiconductor layer of the second transistor is greater than or equal to 0.16 and is less than or equal to 0.20. ### Claim 11 (depends on 10) The display device according to claim 10, wherein the ratio of the atomic percentage of gallium comprised in the second semiconductor layer of the second transistor to the atomic percentage of gallium comprised in the semiconductor layer of the blue light emitting diode is greater than or equal to 0.26 and is less than or equal to 0.50. ### Claim 12 (depends on 10) The display device according to claim 10, wherein the second semiconductor layer is in an amorphous phase. ### Claim 13 (depends on 10) The display device according to claim 10, wherein the second semiconductor layer is in a micro-crystal phase. ### Claim 14 (depends on 10) The display device according to claim 10, wherein a crystal size of the second semiconductor layer is less than 1 nm. ### Claim 15 (depends on 10) The display device according to claim 10, wherein the atomic percentage of gallium comprised in the semiconductor layer of the blue light emitting diode is greater than or equal to 0.40 and is less than or equal to 0.60. ### Claim 16 (depends on 10) The display device according to claim 10, wherein the atomic percentage of gallium comprised in the second semiconductor layer of the second transistor is greater than or equal to 0.176 and is less than or equal to 0.194. ### Claim 17 A display device, comprising: a substrate; a first transistor disposed on the substrate, wherein the first transistor comprises a first semiconductor layer comprising silicon; a second transistor disposed on the substrate, wherein the second transistor comprises a second semiconductor layer comprising gallium and oxygen; and a blue light emitting diode disposed on the substrate and electrically connected to the first transistor and the second transistor, wherein the blue light emitting diode comprises a semiconductor layer comprising gallium nitride, wherein a ratio of an atomic percentage of gallium comprised in the second semiconductor layer of the second transistor to an atomic percentage of gallium comprised in the semiconductor layer of the blue light emitting diode is greater than or equal to 0.26 and is less than or equal to 0.55, the first transistor is electrically connected to a scan line and a data line so as to serve as a signal receiving transistor, the second transistor is electrically connected between the first transistor and the blue light emitting diode, and the second transistor serves as a driving transistor, wherein the display device further comprises: a third transistor disposed on the substrate, wherein the third transistor comprises a third semiconductor layer comprising gallium and oxygen; and a fourth transistor disposed on the substrate, wherein the fourth transistor comprises a fourth semiconductor layer comprising silicon, wherein the third transistor serves as a signal reset transistor, and the fourth transistor serves as a light emission control transistor, and when comparing the third semiconductor layer to the fourth semiconductor layer, the third semiconductor layer has a higher carrier mobility and the fourth semiconductor layer has a lower carrier mobility.