# US 10,319,879 B2 · Semiconductor structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,879 B2 - Document ID: US10319879B2 - Status: Granted - Kind: B2 - Application number: 15/453,873 - Filed: 2017-03-08 - Published: 2017-09-14 - Granted: 2019-06-11 - Earliest claimed: 2016-03-08 - Assignees: Genesis Photonics Inc. - Applicants: Genesis Photonics Inc. - Inventors: Cheng-Hung Lin; Jeng-Jie Huang; Chi-Feng Huang - Web page: https://patentgrep.com/patent/US10319879B2 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/81: Bodies - H10H 20/8252: {characterised by the dopants} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0≤x1<0.4, and 0≤y1<0.4. The second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, a chemical formula of the second hole supply layer is Alx2Iny2Ga1-x2-y2N, wherein 0≤x2<0.4, 0≤y2<0.4, and x1>x2. ## Claims ### Claim 1 A semiconductor structure, comprising: a first-type semiconductor layer; a second-type semiconductor layer; a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer; and a hole supply layer, being an AlInGaN based layer doped with carbon, disposed between the light emitting layer and the second-type semiconductor layer, wherein the hole supply layer comprises a first hole supply layer, a second hole supply layer and a third hole supply layer, the first hole supply layer is disposed between the light emitting layer and the second hole supply layer, the second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, and the third hole supply layer is disposed between the second hole supply layer and the second-type semiconductor layer, wherein an aluminum content in the first hole supply layer, as compared to an aluminum content in the second hole supply layer, has a first peak in terms of a concentration curve of aluminum, and an aluminum content in the third hole supply layer, as compared to the aluminum content in the second hole supply layer, has a second peak in terms of the concentration curve of aluminum, wherein the first, second and third hole supply layers are doped with carbon in a concentration greater than or equal to 3×1017 atom/cm3. ### Claim 2 (depends on 1) The semiconductor structure of claim 1, wherein each of the first hole supply layer, the second hole supply layer and the third hole supply layer is a superlattice hole supply layer. ### Claim 3 (depends on 1) The semiconductor structure of claim 1, wherein a value of the first peak of the concentration curve of aluminum is greater than a value of the second peak of the concentration curve of aluminum. ### Claim 4 (depends on 1) The semiconductor structure of claim 1, wherein the first, second and third hole supply layers are doped with magnesium in a concentration greater than or equal to 1019 atom/cm3. ### Claim 5 (depends on 4) The semiconductor structure of claim 4, wherein a magnesium content in the second hole supply layer, as compared to magnesium contents in the first hole supply layer and the third hole supply layer, has a third peak in terms of a concentration curve of magnesium. ### Claim 6 A semiconductor structure, comprising: a first-type semiconductor layer; a second-type semiconductor layer; a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer; and a hole supply layer, disposed between the light emitting layer and the second-type semiconductor layer, the hole supply layer being an AlInGaN based layer, wherein the hole supply layer, a concentration curve of aluminum in the hole supply layer has two adjacent peaks comprising a first peak nearby the light emitting layer and a second peak nearby the second-type semiconductor layer, wherein the hole supply layer is doped with magnesium in a concentration greater than or equal to 1019 atom/cm3, and a concentration curve of magnesium in the hole supply layer has a third peak located between the first peak and the second peak of the concentration curve of aluminum. ### Claim 7 (depends on 6) The semiconductor structure of claim 6, wherein a value of the first peak of the concentration curve of aluminum is greater than a value of the second peak of the concentration curve of aluminum. ### Claim 8 (depends on 6) The semiconductor structure of claim 6, wherein the hole supply layer is doped with carbon in a concentration greater than or equal to 3×1017 atom/cm3. ### Claim 9 A semiconductor structure, comprising: a first-type semiconductor layer; a second-type semiconductor layer; a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer; a first gallium nitride (GaN) based layer, comprising aluminum and indium, and disposed between the light emitting layer and the second-type semiconductor layer; a second GaN based layer comprising aluminum and indium, disposed between the first GaN based layer and the second-type semiconductor layer; and a third GaN based layer, comprising aluminum and indium, and disposed between the second GaN based layer and the second-type semiconductor layer, wherein an aluminum content in the first GaN based layer, as compared to an aluminum content in the second GaN based layer, has a first peak in terms of the concentration curve of aluminum, and an aluminum content in the third GaN based layer, as compared to the aluminum content in the second GaN based layer, has a second peak in terms of the concentration curve of aluminum, wherein the first, second and third GaN based layers are doped with magnesium in a concentration greater than or equal to 1019 atom/cm3, and the first GaN based layer is doped with carbon in a concentration greater than or equal to 3×1017 atom/cm3. ### Claim 10 (depends on 9) The semiconductor structure of claim 9, wherein the second GaN based layer is doped with carbon in a concentration greater than or equal to 3×1017 atom/cm3. ### Claim 11 (depends on 9) The semiconductor structure of claim 9, wherein the second and third GaN based layers are doped with carbon in concentrations greater than or equal to 3×1017 atom/cm3. ### Claim 12 (depends on 9) The semiconductor structure of claim 9, wherein a value of the first peak of the concentration curve of aluminum is greater than a value of the second peak of the concentration curve of aluminum. ### Claim 13 (depends on 9) The semiconductor structure of claim 9, wherein a magnesium content in the second GaN based layer, as compared to magnesium contents in the first GaN based layer and the third GaN based layer, has a third peak in terms of a concentration curve of magnesium. ### Claim 14 A semiconductor structure, comprising: a first-type semiconductor layer; a second-type semiconductor layer; a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer; and a hole supply layer, being an AlInGaN based layer doped with carbon, disposed between the light emitting layer and the second-type semiconductor layer, wherein the hole supply layer comprises a first hole supply layer, a second hole supply layer and a third hole supply layer, the first hole supply layer is disposed between the light emitting layer and the second hole supply layer, the second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, and the third hole supply layer is disposed between the second hole supply layer and the second-type semiconductor layer, wherein an aluminum content in the first hole supply layer, as compared to an aluminum content in the second hole supply layer, has a first peak in terms of a concentration curve of aluminum, and an aluminum content in the third hole supply layer, as compared to the aluminum content in the second hole supply layer, has a second peak in terms of the concentration curve of aluminum, wherein the first, second and third hole supply layers are doped with magnesium in a concentration greater than or equal to 1019 atom/cm3. ### Claim 15 (depends on 14) The semiconductor structure of claim 14, wherein each of the first hole supply layer, the second hole supply layer and the third hole supply layer is a superlattice hole supply layer. ### Claim 16 (depends on 14) The semiconductor structure of claim 14, wherein a magnesium content in the second hole supply layer, as compared to magnesium contents in the first hole supply layer and the third hole supply layer, has a third peak in terms of a concentration curve of magnesium. ### Claim 17 (depends on 14) The semiconductor structure of claim 14, wherein a value of the first peak of the concentration curve of aluminum is greater than a value of the second peak of the concentration curve of aluminum.