# US 10,319,877 B2 · Light-emitting device and manufacturing method thereof

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- Number: US 10,319,877 B2
- Document ID: US10319877B2
- Status: Granted
- Kind: B2
- Application number: 15/944,459
- Filed: 2018-04-03
- Published: 2018-08-09
- Granted: 2019-06-11
- Earliest claimed: 2017-05-31
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Chien-Fu Huang; Chih-Chiang Lu; Chun-Yu Lin; Hsin-Chih Chiu
- Web page: https://patentgrep.com/patent/US10319877B2

## CPC

- H10H 20/81: Bodies
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 90/00: Package configurations
- H10H 20/036: {of packages}
- H10H 20/0364: {of interconnections}
- H10H 20/83: Electrodes
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

## Claims

### Claim 1

A light-emitting device, comprising:
a substrate;
a first block of semiconductor stack on the substrate and comprises a first emitting wavelength and a first surface away from the substrate;
a second block of semiconductor stack on the substrate and comprises a second emitting wavelength and a second surface away from the substrate, the second surface and the first surface being non-coplanar; and
a third block of semiconductor stack on the substrate and comprises a third emitting wavelength and a third surface away from the substrate, the third surface and the first surface being coplanar;
wherein the first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

### Claim 2 (depends on 1)

The light-emitting device of claim 1, wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack emit lights of red color, green color, blue color or orange color.

### Claim 3 (depends on 1)

The light-emitting device of claim 1, wherein the first emitting wavelength, the second emitting wavelength and the third emitting wavelength are 440 nm to 460 nm, 510 nm to 530 nm, 620 nm to 645 nm or 595 nm to 620 nm.

### Claim 4 (depends on 1)

The light-emitting device of claim 1, further comprising a dielectric layer formed on the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack.

### Claim 5 (depends on 1)

The light-emitting device of claim 1, wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack are electrically connected with one another.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein the first block of semiconductor stack, the second block of semiconductor stack and the third block of semiconductor stack are electrically connected in parallel with one another.

### Claim 7 (depends on 1)

The light-emitting device of claim 1, wherein the second surface is lower than the first surface and the third surface.

### Claim 8 (depends on 1)

The light-emitting device of claim 1, wherein the second block of semiconductor stack locates between the first block of semiconductor stack and the third block of semiconductor stack.

### Claim 9 (depends on 1)

The light-emitting device of claim 1, further comprising a first bonding layer between the substrate and the first block of semiconductor stack.

### Claim 10 (depends on 1)

The light-emitting device of claim 1, wherein the first surface comprises a first area and the second surface comprises a second area different from the first area.

### Claim 11 (depends on 9)

The light-emitting device of claim 9, further comprising a second bonding layer between the substrate and the second block of semiconductor stack.

### Claim 12 (depends on 11)

The light-emitting device of claim 11, wherein the first bonding layer has a thickness different the second bonding layer.

### Claim 13 (depends on 11)

The light-emitting device of claim 11, wherein the first bonding layer has a thickness same as the second bonding layer.