Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
AssigneeInternational Business Machines Corporation
InventorsTalia S. Gershon, Supratik Guha, Oki Gunawan, Richard A. Haight, Yun Seog Lee
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Abstract
Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
Claims18
A photovoltaic device, comprising:
- a substrate coated with a conductive layer;
- an absorber layer on the conductive layer, wherein the absorber layer comprises Ag, Zn, Sn, and at least one of S and Se;
- a buffer layer on the absorber layer, wherein the buffer layer comprises a material selected from the group consisting of:
- Cu2O, NiO, ZnTe, AlP, MoO3, CdTe, CuI, MoO2, MoS2, MoSe2, and combinations thereof;
- and
- a transparent front contact on the buffer layer.
A photovoltaic device, comprising:
- a substrate coated with a conductive layer;
- an absorber layer on the conductive layer, wherein the absorber layer comprises Ag, Zn, Sn, and at least one of S and Se;
- and
- a buffer layer on the absorber layer, wherein the buffer layer comprises a material selected from the group consisting of:
- Cu2O, NiO, ZnTe, AlP, MoO3, CdTe, CuI, MoO2, MoS2, MoSe2, and combinations thereof.
Dependencies are inferred from the claim text.