# US 10,319,849 B2 · Semiconductor device, and alternator and power conversion device which use same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,849 B2 - Document ID: US10319849B2 - Status: Granted - Kind: B2 - Application number: 15/102,771 - Filed: 2014-12-12 - Published: 2016-10-27 - Granted: 2019-06-11 - Earliest claimed: 2013-12-12 - Assignees: Hitachi Power Semiconductor Device, Ltd. - Applicants: Hitachi Power Semiconductor Device, Ltd. - Inventors: Tetsuya Ishimaru; Mutsuhiro Mori; Junichi Sakano; Kohhei Onda - Web page: https://patentgrep.com/patent/US10319849B2 ## CPC - H10D 84/148: {the built-in components being breakdown diodes, e.g. Zener diodes} - H02K 11/00: Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection (casings, enclosures or supports H02K5/00) - H02K 11/05: Rectifiers associated with casings, enclosures or brackets - H02K 19/36: Structural association of synchronous generators with auxiliary electric devices influencing the characteristic of the generator or controlling the generator, e.g. with impedances or switches - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02M 7/217: using semiconductor devices only - H02M 7/219: in a bridge configuration - H02P 9/00: Arrangements for controlling electric generators for the purpose of obtaining a desired output - H10D 84/144: {in antiparallel diode configurations} - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 40/25: characterised by their materials - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - H10W 72/00: Interconnections or connectors in packages - H10W 74/127: {characterised by arrangements for sealing or adhesion} - H10W 74/129: {forming a chip-scale package [CSP]} - H10W 76/138: having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type - H10W 90/00: Package configurations - H02M 1/0006: {Arrangements for supplying an adequate voltage to the control circuit of converters} - H10W 46/101: {characterised by the type of information, e.g. logos or symbols} - H10W 46/301: {for alignment} - H10W 46/607: {Located on parts of packages, e.g. on encapsulations or on package substrates} - H10W 72/07173: {Means for moving chips, wafers or other parts, e.g. conveyor belts} - H10W 72/07178: {Means for aligning} - H10W 72/073: {of die-attach connectors} - H10W 72/07336: {Soldering or alloying} - H10W 72/07354: {changes in dispositions} - H10W 72/075: {of bond wires} - H10W 72/07636: {Soldering or alloying} - H10W 72/347: {Dispositions of multiple die-attach connectors} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/381: {Auxiliary members} - H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/634: {Cross-sectional shape} - H10W 72/646: {the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector} - H10W 72/652: {comprising metals or metalloids, e.g. silver} - H10W 72/871: {Bond wires and strap connectors} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/763: {between laterally-adjacent chips} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H02K: DYNAMO-ELECTRIC MACHINES (dynamo-electric relays H01H53/00; conversion of DC or AC input power into surge output power {H03K3/53}) - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H02P: CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode. ## Claims ### Claim 1 A semiconductor device comprising: a first external electrode to be attached to an alternator, the first external electrode having an outer peripheral section, which has a circular shape in top plan view; a MOSFET chip; a second external electrode disposed on one side of the MOSFET chip, on the other side of which the first external electrode is disposed; a control circuitry to which a voltage at a drain electrode of the MOSFET chip and a voltage at a source electrode of the MOSFET chip are inputted or a current flowing between the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is inputted, the control circuitry generating a control signal provided to a gate of the MOSFET chip on the basis of the voltages or the current; and a capacitor that supplies electric power to the control circuitry, wherein the MOSFET chip and the control circuitry are mounted on the first external electrode, wherein the first external electrode, the drain electrode of the MOSFET chip, the source electrode of the MOSFET chip, and the second external electrode are disposed so as to be stacked in this order in an upward direction, wherein the drain electrode of the MOSFET chip and the first external electrode are electrically connected with each other, wherein the source electrode of the MOSFET chip and the second external electrode are electrically connected with each other, and wherein the capacitor is mounted on the first external electrode via an isolation substrate. ### Claim 2 (depends on 1) The semiconductor device set forth in claim 1, wherein the circular outer peripheral section or a bottom surface of the first external electrode has a recess or a projection for positioning the circular outer peripheral section in a rotational direction around a center line of the circular outer peripheral section. ### Claim 3 (depends on 1) The semiconductor device set forth in claim 1, wherein the MOSFET chip and the second external electrode are positioned on a center line of the circular outer peripheral section. ### Claim 4 (depends on 1) The semiconductor device set forth in claim 1, wherein an extended surface of the drain electrode of the MOSFET chip and an extended surface of the first external electrode are coupled with each other through solder or by press-fitting and an extended surface of the source electrode of the MOSFET chip and an extended surface of the second external electrode are connected with each other through solder or by press-fitting. ### Claim 5 (depends on 1) The semiconductor device set forth in claim 1, wherein the MOSFET chip and the control circuitry are electrically connected with each other by a wire and the control circuitry and the capacitor are electrically connected with each other by a wire. ### Claim 6 (depends on 1) The semiconductor device set forth in claim 1, wherein an electrical connection by a conductor or a conduction mechanism having a spring is made between the MOSFET chip and the control circuitry and between the control circuitry and the capacitor, the conductor or the conduction mechanism each having formed with a shape enabling respective connections, wherein the conductor is fixed to electrodes via solder, and wherein the conduction mechanism is fixed to electrodes by being pressed with an elastic force of the spring. ### Claim 7 (depends on 1) The semiconductor device set forth in claim 1, wherein the MOSFET chip has a rectangular shape, and wherein the capacitor and the control circuitry are disposed alongside and adjacent to a longitudinal side of the rectangular shape. ### Claim 8 (depends on 1) The semiconductor device set forth in claim 1, wherein the semiconductor device further comprises a zener diode, wherein the zener diode has a first main terminal electrically connected to the first external electrode and an extended surface of the first main terminal is coupled to an extended surface of the first external electrode, wherein the zener diode has a second main terminal electrically connected to the second external electrode and an extended surface of the second main terminal is coupled to an extended surface of the second external electrode. ### Claim 9 (depends on 1) The semiconductor device set forth in claim 1, wherein a zener diode is incorporated in the MOSFET chip. ### Claim 10 (depends on 1) The semiconductor device set forth in claim 1, wherein the first external electrode has a pedestal having an extent within the circular outer peripheral section, wherein the MOSFET chip, the control circuitry, and the capacitor are mounted on the pedestal of the first external electrode, wherein the pedestal of the first external electrode, the MOSFET chip, the control circuitry, and the capacitor are encapsulated by a first resin. ### Claim 11 (depends on 1) The semiconductor device set forth in claim 1, wherein the first external electrode has a pedestal having an extent within the circular outer peripheral section, wherein the MOSFET chip, the control circuitry, and the capacitor are mounted on the pedestal of the first external electrode, wherein the pedestal of the first external electrode, the MOSFET chip, the control circuitry, and the capacitor are encapsulated by a first resin, wherein, in the first resin, side walls of the MOSFET chip and side walls of a semiconductor chip of the control circuitry are covered with a second resin, and wherein the second resin has a higher adhesion with the MOSFET chip and the semiconductor chip of the control circuitry than the first resin. ### Claim 12 A semiconductor device comprising: a first external electrode to be attached to an alternator, the first external electrode having an outer peripheral section, which has a circular shape in top plan view; a MOSFET chip; a second external electrode disposed on one side of the MOSFET chip, on the other side of which the first external electrode is disposed; a control circuitry to which a voltage at a drain electrode of the MOSFET chip and a voltage at a source electrode of the MOSFET chip are inputted or a current flowing between the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is inputted, the control circuitry generating a control signal provided to a gate of the MOSFET chip on the basis of the voltages or the current; and a capacitor that supplies electric power to the control circuitry, wherein the second external electrode has a pedestal having an extent within the circular outer peripheral section of the first external electrode, wherein the MOSFET chip and the control circuitry are mounted on the pedestal of the second external electrode, wherein the second external electrode, the drain electrode of the MOSFET chip, the source electrode of the MOSFET chip, and the first external electrode are disposed so as to be stacked in this order in an upward direction, wherein the drain electrode of the MOSFET chip and the second external electrode are electrically connected with each other, wherein the source electrode of the MOSFET chip and the first external electrode are electrically connected with each other, and wherein the capacitor is mounted on the pedestal of the second external electrode via an isolation substrate. ### Claim 13 (depends on 12) The semiconductor device set forth in claim 12, wherein the circular outer peripheral section or a bottom surface of the first external electrode has a recess or a projection for positioning the circular outer peripheral section in a rotational direction around a center line of the circular outer peripheral section. ### Claim 14 (depends on 12) The semiconductor device set forth in claim 12, wherein an extended surface of the drain electrode of the MOSFET chip and an extended surface of the second external electrode are coupled with each other through solder or by press-fitting and an extended surface of the source electrode of the MOSFET chip and an extended surface of the first external electrode is coupled with each other through solder or by press-fitting. ### Claim 15 (depends on 12) The semiconductor device set forth in claim 12, wherein the first external electrode has a pedestal having an extent within the circular outer peripheral section, wherein the pedestal of the first external electrode, the pedestal of the second external electrode, the MOSFET chip, the control circuitry, and the capacitor are encapsulated by a first resin. ### Claim 16 (depends on 1) An alternator comprising a semiconductor device set forth in claim 1. ### Claim 17 An alternator comprising a rectification circuit, the rectification circuit comprising: a high-side circuit in which a first semiconductor device is incorporated as a rectification device; and a low-side circuit in which a second semiconductor device is incorporated as a rectification device, wherein both of the first semiconductor device and the second semiconductor device comprise: a first external electrode to be attached to an alternator, the first external electrode having an outer peripheral section, which has a circular shape in top plan view; a MOSFET chip; a second external electrode disposed on one side of the MOSFET chip, on the other side of which the first external electrode is disposed; a control circuitry to which a voltage at a drain electrode of the MOSFET chip and a voltage at a source electrode of the MOSFET chip are inputted or a current flowing between the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is inputted, the control circuitry generating a control signal provided to a gate of the MOSFET chip on the basis of the voltages or the current; and a capacitor that supplies electric power to the control circuitry, wherein the MOSFET chip of the first semiconductor device and the control circuitry of the first semiconductor device are mounted on the first external electrode of the first semiconductor device, wherein the first external electrode of the first semiconductor device, the drain electrode of the MOSFET chip of the first semiconductor device, the source electrode of the MOSFET chip of the first semiconductor device, and the second external electrode of the first semiconductor device are disposed so as to be stacked in this order in an upward direction, wherein the drain electrode of the MOSFET chip of the first semiconductor device and the first external electrode of the first semiconductor device are electrically connected with each other, wherein the source electrode of the MOSFET chip of the first semiconductor device and the second external electrode of the first semiconductor device are electrically connected with each other, wherein the capacitor of the first semiconductor device is mounted on the first external electrode of the first semiconductor device via a first isolation substrate, wherein the second external electrode of the second semiconductor device has a pedestal having an extent within the circular outer peripheral section of the first external electrode of the second semiconductor device, wherein the MOSFET chip of the second semiconductor device and the control circuitry of the second semiconductor device are mounted on the pedestal of the second external electrode of the second semiconductor device, wherein the second external electrode of the second semiconductor device, the drain electrode of the MOSFET chip of the second semiconductor device, the source electrode of the MOSFET chip of the second semiconductor device, and the first external electrode of the second semiconductor device are disposed so as to be stacked in this order in an upward direction, wherein the drain electrode of the MOSFET chip of the second semiconductor device and the second external electrode of the second semiconductor device are electrically connected with each other, wherein the source electrode of the MOSFET chip of the second semiconductor device and the first external electrode of the second semiconductor device are electrically connected with each other, and wherein the capacitor of the second semiconductor device is mounted on the pedestal of the second external electrode of the second semiconductor device via a second isolation substrate. ### Claim 18 (depends on 1) An electric power conversion device comprising a semiconductor device set forth in claim 1.