# US 10,319,845 B2 · Insulated gate bipolar transistor and fabrication method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,319,845 B2
- Document ID: US10319845B2
- Status: Granted
- Kind: B2
- Application number: 15/874,125
- Filed: 2018-01-18
- Published: 2018-07-19
- Granted: 2019-06-11
- Earliest claimed: 2017-01-18
- Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Inventors: Jian Liu
- Web page: https://patentgrep.com/patent/US10319845B2

## CPC

- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs}
- H10D 62/105: {by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] (IGFETs having LDD or drain extension regions H10D30/601)}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/114: {PN junction isolations}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An insulated gate bipolar transistor and a method for fabricating the insulated gate bipolar transistor are provided. The insulated gate bipolar transistor includes a semiconductor layer including a bulk layer and a cell region including a first region and a second region. The insulated gate bipolar transistor also includes a well region, a drift region, and a plurality of gate structures in the bulk layer associated with the cell region. Further, the insulated gate bipolar transistor includes source and drain doped regions and an ohmic contact region in a top region of the well region. A size of the source and drain doped regions in the second region is smaller than a size of the source and drain doped regions in the first region. A size of the ohmic contact region in the second region is larger than a size of the ohmic contact region in the first region.

## Claims

### Claim 1

An insulated gate bipolar transistor, comprising:
a semiconductor layer, including a collector electrode layer and a bulk layer on the collector electrode layer, wherein the semiconductor layer has a cell region and an edge region around the cell region, and the cell region includes a first region and a second region around the first region;
a well region, in the bulk layer associated with the cell region;
a drift region, in the bulk layer associated with the cell region, wherein the drift region is formed between the well region and the collector electrode layer, and a conductivity type of the drift region is respectively opposite to conductivity types of the well region and the collector electrode layer;
a plurality of gate structures, in the bulk layer associated with the cell region, wherein each gate structure penetrates through the well region and extends into the drift region;
source and drain doped regions, in a top region of the well region on both sides of each gate structure, wherein a conductivity type of the source and drain doped regions is opposite to the conductivity type of the well region, and a size of the source and drain doped regions in the second region is smaller than a size of the source and drain doped regions in the first region; and
an ohmic contact region, in the top region of the well region, wherein the source and drain doped regions are formed between each gate structure and the ohmic contact region, a conductivity type of the ohmic contact region is the same as the conductivity type of the well region, and a size of the ohmic contact region in the second region is larger than a size of the ohmic contact region in the first region.

### Claim 2 (depends on 1)

The insulated gate bipolar transistor according to claim 1, wherein:
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along a direction from the cell region to the edge region;
the size of the source and drain doped regions on one side of the gate structure in the second region is reduced compared to the size of the source and drain doped regions on the other side of the gate structure in the second region along the direction from the cell region to the edge region; and
the size of the ohmic contact region in the second region progressively increases along the direction from the cell region to the edge region.

### Claim 3 (depends on 2)

The insulated gate bipolar transistor according to claim 2, wherein:
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along the direction from the cell region to the edge region;
the reduced size of the source and drain doped regions on one side of the gate structure in the second region compared to the source and drain doped regions on the other side of the gate structure in the second region is the same along the direction from the cell region to the edge region; and
the increased size of the adjacent ohmic contact regions in the second region is the same along the direction from the cell region to the edge region.

### Claim 4 (depends on 3)

The insulated gate bipolar transistor according to claim 3, wherein:
the source and drain doped regions in the second region have a first maximum size;
the ohmic contact region in the second region has a second maximum size;
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along the direction from the cell region to the edge region;
the reduced size of the source and drain doped regions on one side of the gate structure in the second region compared to the source and drain doped regions on the other side of the gate structure in the second region is in a range of approximately ⅓-⅕ of the first maximum size along the direction from the cell region to the edge region; and
the increased size of the adjacent ohmic contact regions in the second region is in a range of approximately ⅓-⅕ of the second maximum size along the direction from the cell region to the edge region.

### Claim 5 (depends on 1)

The insulated gate bipolar transistor according to claim 1, wherein:
the semiconductor layer includes a buffer layer formed between the collector electrode layer and the bulk layer; and
a conductivity type of the buffer layer is the same as the conductivity type of the drift region.

### Claim 6 (depends on 5)

The insulated gate bipolar transistor according to claim 5, wherein:
the buffer layer has buffer ions;
the drift region has drift ions; and
a concentration of the buffer ions in the buffer layer is larger than a concentration of the drift ions in the drift region.

### Claim 7 (depends on 1)

The insulated gate bipolar transistor according to claim 1, wherein:
the ohmic contact region has ohmic contact ions;
the well region has well ions; and
a concentration of the ohmic contact ions in the ohmic contact region is larger than a concentration of the well ions in the well region.

### Claim 8 (depends on 1)

The insulated gate bipolar transistor according to claim 1, wherein:
the edge region includes a transition region and a terminal protection region adjacent to the transition region; and
the transition region is located between the cell region and the terminal protection region, wherein the insulated gate bipolar transistor includes:
a ballast structure in the bulk layer in the transition region, and
a protection structure in the bulk layer in the terminal protection region.

### Claim 9

An insulated gate bipolar transistor, comprising:
a semiconductor layer, including a collector electrode layer and a bulk layer on the collector electrode layer, wherein the semiconductor layer has a cell region and an edge region around the cell region, and the cell region includes a first region and a second region around the first region;
a well region, in the bulk layer associated with the cell region;
a drift region, in the bulk layer associated with the cell region, wherein the drift region is formed between the well region and the collector electrode layer, and a conductivity type of the drift region is respectively opposite to conductivity types of the well region and the collector electrode layer;
a plurality of gate structures, in the bulk layer associated with the cell region, wherein each gate structure penetrates through the well region and extends into the drift region;
source and drain doped regions, in a top region of the well region on both sides of each gate structure, wherein a conductivity type of the source and drain doped regions is opposite to the conductivity type of the well region, and a size of the source and drain doped regions in the second region is smaller than a size of the source and drain doped regions in the first region; and
an ohmic contact region, in the top region of the well region, wherein the source and drain doped regions are formed between each gate structure and the ohmic contact region, a conductivity type of the ohmic contact region is the same as the conductivity type of the well region, and a size of the ohmic contact region in the second region is larger than a size of the ohmic contact region in the first region, wherein:
the size of the source and drain doped regions in the second region progressively decreases along a direction from the cell region to the edge region; and
the size of the ohmic contact region in the second region progressively increases along the direction from the cell region to the edge region.

### Claim 10

A method for fabricating an insulated gate bipolar transistor, comprising:
providing a semiconductor layer, including a collector electrode layer and a bulk layer on the collector electrode layer, wherein the semiconductor layer has a cell region and an edge region around the cell region, and the cell region includes a first region and a second region around the first region;
forming a well region, a drift region, and a plurality of gate structures, in the bulk layer associated with the cell region, wherein the drift region is formed between the well region and the collector electrode layer, a conductivity type of the drift region is respectively opposite to conductivity types of the well region and the collector electrode layer, and each gate structure penetrates through the well region and extends into the drift region; and
forming source and drain doped regions and an ohmic contact region, in a top region of the well region, wherein the source and drain doped regions are formed on both sides of each gate structure and between the gate structure and the ohmic contact region, a conductivity type of the source and drain doped regions is opposite to the conductivity type of the well region, a size of the source and drain doped regions in the second region is smaller than a size of the source and drain doped regions in the first region, a conductivity type of the ohmic contact region is the same as the conductivity type of the well region, and a size of the ohmic contact region in the second region is larger than a size of the ohmic contact region in the first region.

### Claim 11 (depends on 10)

The method according to claim 10, wherein:
the ohmic contact region is formed after forming the source and drain doped regions; or
the source and drain doped regions are formed after forming the ohmic contact region.

### Claim 12 (depends on 11)

The method according to claim 11, wherein forming the source and drain doped regions includes:
forming a patterned first mask layer on the semiconductor layer, wherein the first mask layer covers the edge region and exposes portions of the well region on both sides of each gate structure;
performing a first ion implantation process on the top region of the well region by using the first mask layer as a mask to form the source and drain doped regions; and
removing the first mask layer after performing the first ion implantation process.

### Claim 13 (depends on 12)

The method according to claim 12, wherein forming the ohmic contact region includes:
forming a patterned second mask layer on the semiconductor layer, wherein the second mask layer covers the edge region and exposes portions of the well region on both sides of each gate structure;
performing a second ion implantation process on the top region of the well region by using the second mask layer as a mask to form the ohmic contact region; and
removing the second mask layer after performing the second ion implantation process.

### Claim 14 (depends on 10)

The method according to claim 10, wherein:
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along a direction from the cell region to the edge region;
the size of the source and drain doped regions on one side of the gate structure in the second region is reduced compared to the size of the source and drain doped regions on the other side of the gate structure in the second region along the direction from the cell region to the edge region; and
the size of the ohmic contact region in the second region progressively increases along the direction from the cell region to the edge region.

### Claim 15 (depends on 14)

The method according to claim 14, wherein:
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along the direction from the cell region to the edge region;
the reduced size of the source and drain doped regions on one side of the gate structure in the second region compared to the source and drain doped regions on the other side of the gate structure in the second region is the same along the direction from the cell region to the edge region; and
the increased size of the adjacent ohmic contact regions in the second region is the same along the direction from the cell region to the edge region.

### Claim 16 (depends on 15)

The method according to claim 15, wherein:
the source and drain doped regions in the second region have a first maximum size;
the ohmic contact region in the second region has a second maximum size;
the size of the source and drain doped regions between the adjacent gate structures in the second region is the same along the direction from the cell region to the edge region;
the reduced size of the source and drain doped regions on one side of the gate structure in the second region compared to the source and drain doped regions on the other side of the gate structure in the second region is in a range of approximately ⅓-⅕ of the first maximum size along the direction from the cell region to the edge region; and
the increased size of the adjacent ohmic contact regions in the second region is in a range of approximately ⅓-⅕ of the second maximum size along the direction from the cell region to the edge region.

### Claim 17 (depends on 10)

The method according to claim 10, wherein:
the size of the source and drain doped regions in the second region progressively decreases along a direction from the cell region to the edge region; and
the size of the ohmic contact region in the second region progressively increases along the direction from the cell region to the edge region.

### Claim 18 (depends on 10)

The method according to claim 10, wherein:
the ohmic contact region has ohmic contact ions;
the well region has well ions; and
a concentration of the ohmic contact ions in the ohmic contact region is larger than a concentration of the well ions in the well region.

### Claim 19 (depends on 10)

The method according to claim 10, wherein:
the semiconductor layer includes a buffer layer formed between the collector electrode layer and the bulk layer; and
a conductivity type of the buffer layer is the same as the conductivity type of the drift region.

### Claim 20 (depends on 10)

The method according to claim 10, wherein:
the edge region includes a transition region and a terminal protection region adjacent to the transition region; and
the transition region is located between the cell region and the terminal protection region, wherein before forming the gate structures, forming the insulated gate bipolar transistor includes:
forming a ballast structure in the bulk layer in the transition region, and forming a protection structure in the bulk layer in the terminal protection region.