# US 10,319,838 B2 · III-V fin generation by lateral growth on silicon sidewall

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- Number: US 10,319,838 B2
- Document ID: US10319838B2
- Status: Granted
- Kind: B2
- Application number: 14/876,986
- Filed: 2015-10-07
- Published: 2017-04-13
- Granted: 2019-06-11
- Earliest claimed: 2015-10-07
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Sanghoon Lee; Brent A. Wacaser; Devendra K. Sadana; Effendi Leobandung
- Web page: https://patentgrep.com/patent/US10319838B2

## CPC

- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/751: {having composition variations in the channel regions}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3414: {being group IIIA-VIA materials}
- H10P 14/3416: {Nitrides}
- H10P 14/3451: {Structure}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method comprises providing a structure defined by a silicon material on a buried oxide layer of a substrate; causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material; adjusting a growth condition to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and processing the silicon material and the III-V material to form a fin.

## Claims

### Claim 1

A method, comprising:
providing a structure defined by a silicon material on a buried oxide layer of a substrate;
causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material;
adjusting a growth condition to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and
processing the silicon material and the III-V material to form a fin;
wherein processing the silicon material and the III-V material to form a fin comprises disposing an oxide layer over the structure defined by a silicon material and the buried oxide layer, planarizing the oxide layer and the fin, and removing excess oxide layer using a wet-etch technique.

### Claim 2 (depends on 1)

The method of claim 1, further comprising forming a source region and a drain region on opposing sides of the fin and forming a gate extending across the fin between the source region and the drain region.

### Claim 3 (depends on 2)

The method of claim 2, wherein forming a source region and a drain region comprises doping using one or more of an epitaxy process and an ion implantation process.

### Claim 4 (depends on 1)

The method of claim 1, further comprising removing the structure defined by the silicon material.

### Claim 5 (depends on 1)

The method of claim 1, wherein the silicon material is either a (110) silicon material or a (112) silicon material.

### Claim 6

A method, comprising:
providing a structure defined by a silicon material on a buried oxide layer of a substrate;
causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material;
adjusting one or more of a temperature and a pressure to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and
processing the silicon material and the III-V material to form a fin;
wherein processing the silicon material and the III-V material to form a fin comprises disposing an oxide layer over the structure defined by a silicon material and the buried oxide layer, planarizing the oxide layer and the fin, and removing excess oxide layer using a wet-etch technique.

### Claim 7 (depends on 6)

The method of claim 6, further comprising forming a source region and a drain region on opposing sides of the fin and forming a gate extending across the fin between the source region and the drain region.

### Claim 8 (depends on 7)

The method of claim 7, wherein forming a source region and a drain region comprises doping using one or more of an epitaxy process and an ion implantation process.

### Claim 9 (depends on 6)

The method of claim 6, further comprising removing the structure defined by the silicon material.

### Claim 10 (depends on 6)

The method of claim 6, wherein the silicon material is either a (110) silicon material or a (112) silicon material.