# US 10,319,825 B2 · Controlled synthesis and transfer of large area heterostructures made of bilayer and multilayer transition metal dichalocogenides

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- Number: US 10,319,825 B2
- Document ID: US10319825B2
- Status: Granted
- Kind: B2
- Application number: 15/724,612
- Filed: 2017-10-04
- Published: 2018-02-08
- Granted: 2019-06-11
- Earliest claimed: 2013-03-26
- Assignees: The Penn State Research Foundation
- Applicants: The Penn State Research Foundation
- Inventors: Humberto Terrones; Mauricio Terrones; Ana Laura Elias; Nestor Perea-Lopez
- Web page: https://patentgrep.com/patent/US10319825B2

## CPC

- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 62/80: characterised by the materials
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10P 14/3236: {being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
- H10P 14/3246: {Monolayers}
- H10P 14/3252: {Alternating layers, e.g. superlattice}
- H10P 14/3436: {being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10W 20/01: {Manufacture or treatment}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A TMD system in which the first layered material is made of heterobilayers or multilayers with semiconducting direct band gaps is provided. The first layered material may be made of multiple layers of different TMD with different stackings, exhibiting smaller direct and indirect band gaps smaller than monolayer systems of TMD.

## Claims

### Claim 1

A method of making a semiconducting transition metal dichalcogenides (TMD) system comprising:
sulfurizing or selenizing a transition metal oxide; and
overlapping at least two monolayers of said sulfurized or selenized transition metal oxide.

### Claim 2 (depends on 1)

The method of claim 1, further comprising applying the at least two monolayers by chemical vapor deposition.

### Claim 3

A process for production of a monolayer semiconducting material comprising a transition metal and a chalcogenide selected from the group consisting of sulfur, tellurium, and selenium, comprising:
depositing a transition metal oxide on a support; and
subjecting said transition metal oxide to chemical vapor deposition at an elevated temperature and in the presence of gaseous selenium, gaseous tellurium, or gaseous sulfur, thereby producing a monolayer material.

### Claim 4 (depends on 3)

The process of claim 3, wherein said elevated temperature is between 750-900 degrees C.

### Claim 5 (depends on 4)

The process of claim 4, wherein the elevated temperature is 800 degrees C.

### Claim 6 (depends on 3)

The process of claim 3, wherein the transition metal oxide is an oxide of an element selected from the group consisting of tungsten, molybdenum, niobium, vanadium, and tantalum.

### Claim 7 (depends on 6)

The process of claim 6, further comprising:
depositing an additional transition metal oxide on the monolayer material; and
depositing, by chemical vapor deposition, an additional chalcogenide on the additional transition metal oxide.