# US 10,319,821 B2 · Silicon carbide substrate

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- Number: US 10,319,821 B2
- Document ID: US10319821B2
- Status: Granted
- Kind: B2
- Application number: 15/754,661
- Filed: 2016-07-21
- Published: 2018-09-06
- Granted: 2019-06-11
- Earliest claimed: 2015-10-15
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Shunsaku Ueta; Kyoko Okita; Shin Harada
- Web page: https://patentgrep.com/patent/US10319821B2

## CPC

- H10D 62/8325: {Silicon carbide}
- C30B 23/025: {characterised by the substrate}
- C30B 29/36: Carbides
- H10P 14/2904: {Silicon carbide}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 μm or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4°. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm−1.

## Claims

### Claim 1

A silicon carbide substrate, comprising:
a carbon-side principal surface made of a crystal surface mainly composed of a carbon surface;
a silicon-side principal surface made of a crystal surface mainly composed of a silicon surface,
wherein the silicon carbide substrate has a 4H crystal structure and contains nitrogen,
wherein the silicon carbide substrate has a diameter in a range of 100 to 150 mm and a thickness in a range of 300 to 600 μm,
wherein an off angle of the carbon-side principal surface and the silicon-side principal surface relative to a {0001} plane is smaller than or equal to 4°, and
wherein a nitrogen concentration in the carbon-side principal surface is higher than a nitrogen concentration in the silicon-side principal surface, and a difference between a Raman peak shift of the carbon-side principal surface and a Raman peak shift of the silicon-side principal surface is smaller than or equal to 0.2 cm−1.

### Claim 2 (depends on 1)

The silicon carbide substrate as claimed in claim 1, wherein the nitrogen concentration in the carbon-side principal surface is higher than the nitrogen concentration in the silicon-side principal surface by 1×1016 cm−3.

### Claim 3 (depends on 1)

The silicon carbide substrate as claimed in claim 1, wherein a difference between the nitrogen concentration in the carbon-side principal surface and the nitrogen concentration in the silicon-side principal surface is smaller than or equal to 1×1017 cm−3.

### Claim 4 (depends on 1)

The silicon carbide substrate as claimed in claim 1, wherein the nitrogen concentration increases with decreasing distance from the carbon-side principal surface in a thickness direction.