# US 10,319,806 B2 · Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,806 B2 - Document ID: US10319806B2 - Status: Granted - Kind: B2 - Application number: 15/220,869 - Filed: 2016-07-27 - Published: 2017-02-02 - Granted: 2019-06-11 - Earliest claimed: 2015-07-28 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives; STMicroelectronics (Crolles 2) SAS - Applicants: Commissariat à L'energie Atomique Et Aux Energies Alternatives; Stmicroelectronics (Crolles 2) SAS - Inventors: Guillaume Rodriguez; Aomar Halimaoui; Laurent Ortiz - Web page: https://patentgrep.com/patent/US10319806B2 ## CPC - H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)} - H10D 1/684: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers} - H10D 1/688: {comprising barrier layers to prevent diffusion of hydrogen or oxygen} - H10D 1/694: {comprising noble metals or noble metal oxides} - H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type. ## Claims ### Claim 1 Electrode for a structure of Metal-Insulator-Metal type formed on a substrate by a stack successively comprising, from the substrate, an adhesion layer comprising a layer made from TiO2, a gold layer in direct contact with the adhesion layer, a barrier layer made from electrically conducting oxide in direct contact with the gold layer, and a platinum layer in direct contact with the barrier layer. ### Claim 2 (depends on 1) Electrode according to claim 1, wherein the barrier layer is made from RuO2. ### Claim 3 (depends on 2) Electrode according to claim 2, wherein the barrier layer has a thickness greater than or equal to 15 nm. ### Claim 4 (depends on 3) Electrode according to claim 3, wherein the barrier layer has a thickness greater than or equal to 80 nm. ### Claim 5 (depends on 1) Electrode according to claim 1, wherein the adhesion layer is a TiO2/metal bilayer, the metal being chosen from titanium, chromium, or tantalum, and the gold layer is in direct contact with the layer made from TiO2. ### Claim 6 (depends on 1) Electrode according to claim 1, wherein the platinum layer has a thickness of about 100 nm and the gold layer has a thickness ranging from 1 μm to 2 μm. ### Claim 7 (depends on 1) Method for fabricating the electrode according to claim 1, comprising successively: providing a substrate covered by an adhesion layer made from titanium dioxide, forming an electrode on the adhesion layer, the electrode being formed by successive depositions of a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer, the electrically conducting oxide being a noble metal oxide. ### Claim 8 (depends on 1) Method for fabricating a capacitor comprising successively: fabricating an electrode according to claim 1 as a first electrode, forming a layer of perovskite type dielectric material on the platinum layer of the first electrode, performing heat treatment at a temperature greater than or equal to 700° C. under oxygen so as to crystallize the dielectric material, forming a second electrode on the crystallized dielectric material layer. ### Claim 9 (depends on 8) Method according to claim 8, wherein the heat treatment temperature is greater than or equal to 850° C. ### Claim 10 (depends on 5) Electrode according to claim 5, wherein the adhesion layer is a TiO2/titanium bilayer. ### Claim 11 (depends on 1) Electrode according to claim 1, wherein the gold layer has a thickness ranging from 1 μm to 2 μm. ### Claim 12 (depends on 7) Method according to claim 7, wherein the layer made of TiO2 is formed by oxidation of the layer made of Ti metal. ### Claim 13 (depends on 1) Electrode according to claim 1, wherein the adhesion layer completely separates the gold layer and the substrate. ### Claim 14 (depends on 1) Electrode according to claim 1, wherein the layer made of TiO2 completely separates the Ti metal layer and the gold layer. ### Claim 15 Capacitor of Metal-Insulator-Metal type comprising: a first electrode formed by a stack successively comprising a gold layer in direct contact with the adhesion layer, a barrier layer made from electrically conducting oxide in direct contact with the gold layer, and a platinum layer in direct contact with the barrier layer, the electrically conducting oxide being a noble metal oxide, a second electrode, a layer of perovskite type dielectric material arranged between the first electrode and the second electrode. ### Claim 16 (depends on 15) Capacitor according to claim 15, wherein the barrier layer is made from RuO2 with a thickness greater than or equal to 15 nm. ### Claim 17 (depends on 15) Capacitor according to claim 15, comprising a substrate and wherein the gold layer is separated from the substrate by an adhesive layer made from titanium dioxide. ### Claim 18 (depends on 15) Capacitor according to claim 15, wherein the perovskite type dielectric material is selected from a group consisting of Pb[ZrxTi1-x]O3, SrTiO3, BaTiO3, and Ba[SrxTi1-x]O3. ### Claim 19 Electrode for a structure of Metal-Insulator-Metal type formed on a substrate by a stack successively comprising, from the substrate, a gold layer, a barrier layer made from RuO2 in direct contact with the gold layer and a platinum layer in direct contact with the barrier layer and wherein the barrier layer has a thickness greater than or equal to 15 nm so as to block diffusion of gold and platinum.