# US 10,319,805 B2 · Method of fabricating semiconductor devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,805 B2 - Document ID: US10319805B2 - Status: Granted - Kind: B2 - Application number: 15/626,271 - Filed: 2017-06-19 - Published: 2018-04-19 - Granted: 2019-06-11 - Earliest claimed: 2016-10-18 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jun Ho Yoon; Won Chul Lee; Sung Yeon Kim; Jae Hong Park; Chan Hoon Park; Yong Moon Jang; Je Woo Han - Web page: https://patentgrep.com/patent/US10319805B2 ## CPC - H10D 1/692: {Electrodes} - H10P 14/40: of conductive or resistive materials - H10P 50/282: {of inorganic materials} - H10P 50/73: {using masks for insulating materials} - H10P 76/40: of masks comprising inorganic materials - H10P 50/283: {by chemical means} - H10P 50/642: {Chemical etching} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole. ## Claims ### Claim 1 A method of fabricating a semiconductor device, the method comprising: forming an oxide film on a target layer; forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film; forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity with respect to the oxide film larger than the first etch selectivity; forming a second mask film pattern by patterning the second mask film; forming a first mask film pattern by patterning the first mask film; etching first portions of the oxide film by using the second mask film pattern as a first etch mask film; and etching second portions of the oxide film by using the first mask film pattern as a second etch mask film to form a hole, wherein the target layer is exposed via the hole. ### Claim 2 (depends on 1) The method of claim 1, further comprising: completely removing the second mask film pattern after the etching the first portions of the oxide film by using the second mask film pattern as the first etch mask film. ### Claim 3 (depends on 2) The method of claim 2, wherein the removing the second mask film pattern comprises removing the second mask film pattern by wet etching. ### Claim 4 (depends on 1) The method of claim 1, wherein the first thickness is between two to three times the second thickness. ### Claim 5 (depends on 1) The method of claim 1, wherein the oxide film comprises a first oxide film and a second oxide film formed on the first oxide film, and wherein the forming the oxide film on the target layer comprises: forming a lower supporter film interposed between the first oxide film and the second oxide film, and forming an upper supporter film interposed between the second oxide film and the first mask film. ### Claim 6 (depends on 5) The method of claim 5, wherein each of the upper supporter film and the lower supporter film comprises a silicon oxynitride film. ### Claim 7 (depends on 1) The method of claim 1, wherein the first mask film comprises a silicon mask film, and the second mask film comprises a metal mask film. ### Claim 8 (depends on 7) The method of claim 7, wherein the forming the first mask film comprises depositing a silicon and/or a doped silicon. ### Claim 9 (depends on 7) The method of claim 7, wherein the forming the second mask film comprises depositing at least one of tungsten, tungsten nitride, tungsten carbide, aluminum, aluminum oxide, titanium, titanium oxide and tungsten silicide. ### Claim 10 (depends on 1) The method of claim 1, further comprising: forming a lower electrode to fill a second hole; removing the oxide film; forming a dielectric layer conformally over the lower electrode and the target layer; and forming an upper electrode on the dielectric layer. ### Claim 11 A method of fabricating a semiconductor device, the method comprising: forming an isolating film to define an active area in a substrate; forming a gate in the active area; forming an interlayer insulation film on the substrate, a bit line feature, and a landing pad in the interlayer insulation film, wherein the landing pad is electrically connected to the active area; forming an oxide film on the interlayer insulation film; forming a first mask film pattern on the oxide film and a second mask film pattern on the first mask film pattern; forming a first hole penetrating the oxide film to a depth by using the second mask film pattern; forming a second hole by etching a remaining portion of the oxide film by using the first mask film pattern, wherein the landing pad is exposed via the second hole; and forming a capacitor electrically connected to the landing pad via the second hole. ### Claim 12 (depends on 11) The method of claim 11, wherein the first mask film pattern has a first thickness, and the second mask film pattern has a second thickness smaller than the first thickness. ### Claim 13 (depends on 11) The method of claim 11, wherein forming the capacitor comprises: forming a lower electrode to fill the second hole; removing the oxide film; forming a dielectric layer conformally over the lower electrode and a target layer; and forming an upper electrode on the dielectric layer. ### Claim 14 (depends on 11) The method of claim 11, wherein the first mask film pattern contains an oxide film containing silicon or nitride; and the second mask film pattern contains an oxide film contains metal. ### Claim 15 (depends on 11) The method of claim 11, wherein the first mask film pattern has a first etch selectivity with respect to the oxide film, and the second mask film pattern has a second etch selectivity with respect to the oxide film, wherein the second etch selectivity is larger than the first etch selectivity. ### Claim 16 A method of fabricating a semiconductor device, the method comprising: forming an oxide film on an interlayer insulation film; forming a first mask film on the oxide film, wherein the first mask film has a first thickness and a first etch selectivity with respect to the oxide film; forming a second mask film on the first mask film, wherein the second mask film has a second thickness and a second etch selectivity with respect to the oxide film; forming a second mask film pattern by patterning the second mask film; forming a first mask film pattern by patterning the first mask film; forming a first hole penetrating the oxide film to a depth by using the second mask film pattern as a first etch mask; forming a second hole by etching a remaining portion of the oxide film by using the first mask film pattern as a second etch mask, wherein a landing pad in the interlayer insulation film is exposed via the second hole; and forming a capacitor electrically connected to the landing pad via the second hole, wherein the first thickness is larger than the second thickness and the first etch selectivity is smaller than the second etch selectivity. ### Claim 17 (depends on 16) The method of claim 16, wherein forming the capacitor comprises: forming a lower electrode to fill the second hole; removing the oxide film; forming a dielectric layer conformally over the lower electrode and a stopping insulation film; and forming an upper electrode on the dielectric layer. ### Claim 18 (depends on 16) The method of claim 16, wherein the oxide film comprises a first oxide film and a second oxide film formed on the first oxide film, and wherein the forming the oxide film on the interlayer insulation film comprises: forming a lower supporter film between the first oxide film and the second oxide film, and forming an upper supporter film between the second oxide film and the first mask film. ### Claim 19 (depends on 16) The method of claim 16, wherein the first mask film comprises a silicon mask film, and wherein the forming the first mask film comprises depositing a silicon and/or a doped silicon. ### Claim 20 (depends on 16) The method of claim 16, wherein the second mask film comprises a metal mask film, and wherein the forming the second mask film comprises depositing at least one of tungsten, tungsten nitride, tungsten carbide, aluminum, aluminum oxide, titanium, titanium oxide and tungsten silicide.