# US 10,319,798 B2 · Light emitting display apparatus

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- Number: US 10,319,798 B2
- Document ID: US10319798B2
- Status: Granted
- Kind: B2
- Application number: 15/878,825
- Filed: 2018-01-24
- Published: 2018-06-14
- Granted: 2019-06-11
- Earliest claimed: 2008-07-03
- Assignees: Canon Kabushiki Kaisha
- Applicants: Canon Kabushiki Kaisha
- Inventors: Yoshinori Tateishi; Masato Ofuji; Hideya Kumomi; Ryo Hayashi
- Web page: https://patentgrep.com/patent/US10319798B2

## CPC

- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10D 30/6723: {having light shields}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 62/80: characterised by the materials
- H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

## Claims

### Claim 1

A display apparatus comprising:
a substrate;
a light emitting element, the light emitting element comprising an anode electrode, a cathode electrode and a layer including a light emitting material;
a transistor comprising a gate electrode, an oxide semiconductor layer which includes at least any of In, Ga, Zn and Sn, a source electrode and a drain electrode;
a color filter; and
a sealing member for sealing the transistor and the light emitting element,
wherein the color filter has an absorption characteristic with respect to a part of light in a wavelength range of shorter than 390 nm and is interposed between the layer including the light emitting material and the transistor,
wherein the color filter is overlap with the oxide semiconductor layer when viewed from a side of the layer including the light emitting material, and
wherein the transistor is electrically connected to the light emitting element.

### Claim 2 (depends on 1)

The display apparatus according to claim 1, wherein the color filter transmits light having a wavelength of 600 nm.

### Claim 3 (depends on 1)

The display apparatus according to claim 1,
wherein the source electrode and the drain electrode are electrically connected with the oxide semiconductor layer,
wherein the display apparatus further comprises a protecting layer to cover the source electrode, the drain electrode and the oxide semiconductor layer, and
wherein the color filter is located between the layer including the light emitting material and the protecting layer.

### Claim 4 (depends on 1)

The display apparatus according to claim 1,
wherein said substrate is glass substrate,
wherein said gate electrode comprises at least one of Al, Ag, Mo and Ti, and
wherein said source electrode and the drain electrode comprise at least one of Mo and Ti.

### Claim 5 (depends on 1)

The display apparatus according to claim 1, wherein said cathode electrode comprises at least one of Al and Ag.

### Claim 6 (depends on 1)

The display apparatus according to claim 1, wherein said oxide semiconductor layer is amorphous layer.

### Claim 7 (depends on 1)

The display apparatus according to claim 1, wherein said anode electrode comprises ITO layer.

### Claim 8 (depends on 1)

The display apparatus according to claim 1, wherein the oxide semiconductor layer includes In, Ga and Zn.