# US 10,319,789 B2 · Method for producing an optoelectronic component and an optoelectronic component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,789 B2 - Document ID: US10319789B2 - Status: Granted - Kind: B2 - Application number: 15/236,379 - Filed: 2016-08-12 - Published: 2018-02-15 - Granted: 2019-06-11 - Earliest claimed: 2016-08-12 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Darshan Kundaliya; David O'Brien; Britta Göötz - Web page: https://patentgrep.com/patent/US10319789B2 ## CPC - H10K 59/351: {comprising more than three subpixels, e.g. red-green-blue-white [RGBW]} - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/851: Wavelength conversion means - H10H 20/8512: {Wavelength conversion materials} - H10H 20/036: {of packages} - H10H 20/0361: {of wavelength conversion means} - H10H 20/80: Constructional details - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer. ## Claims ### Claim 1 A method for producing an optoelectronic component, the method comprising: A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a first converter layer on the sacrificial layer, the first converter layer comprises quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence, wherein the first converter layer is in direct contact with the semiconductor layer sequence; and E) removing the auxiliary carrier by optical, mechanical and/or chemical treatment and partially destroying the sacrificial layer such that the sacrificial layer partially remains at a side of the first converter layer facing away from the semiconductor layer sequence. ### Claim 2 (depends on 1) The method according to claim 1, wherein steps A) to E) are repeated once more, so that a white emitting optoelectronic component is produced which has a stack of two converter layers, wherein the semiconductor layer sequence is configured to emit radiation in a blue wavelength range, wherein the first converter layer is configured to emit radiation in a red wavelength range and a second converter layer is configured to emit radiation in a green wavelength range. ### Claim 3 (depends on 1) The method according to claim 1, wherein steps A) to E) are repeated at least twice, so that an optoelectronic component is produced which has a stack of at least three converter layers. ### Claim 4 (depends on 3) The method according to claim 3, wherein a white emitting optoelectronic component is produced, wherein the first converter layer is configured to emit radiation in a green wavelength range, wherein a second converter layer is configured to emit radiation in a red wavelength range, and wherein a third converter layer is configured to emit radiation in a yellow wavelength range. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first converter layer is arranged downstream of the semiconductor layer sequence in a main emission direction and are configured to emit radiation in different wavelength ranges. ### Claim 6 (depends on 1) The method according to claim 1, wherein steps A) to E) are repeated at least twice, so that an optoelectronic component is produced wherein converter layers are arranged structured in a plane, when viewed in cross section, onto the optoelectronic component. ### Claim 7 (depends on 1) The method according to claim 1, wherein a maximum thickness of the first converter layer is 2 μm. ### Claim 8 (depends on 1) The method according to claim 1, wherein the auxiliary carrier in step E) is removed by laser lift-off. ### Claim 9 (depends on 1) The method according to claim 1, wherein the auxiliary carrier in step E) is removed by etching or grinding. ### Claim 10 (depends on 1) The method according to claim 1, wherein the sacrificial layer is made of an organic or inorganic material. ### Claim 11 (depends on 1) The method according to claim 1, wherein the sacrificial layer comprises a material which is selected from the group consisting of GaN, CeO2, AlN, SiNx, HfO2 and Ga2O3. ### Claim 12 (depends on 1) The method according to claim 1, wherein the sacrificial layer is applied by one of the following methods: spin-coating, physical vapor deposition, chemical vapor deposition. ### Claim 13 (depends on 1) The method according to claim 1, wherein the quantum dots are selected from the group consisting of InP, CdS, CdSe, InGaAs, GaInP, CuInSe2, ZnSe, ZnS, CdTe, GaSe, AgGaSe2, CuGaS2, CuInS2, CuGaSe2 and ZnGeP2. ### Claim 14 (depends on 1) The method according to claim 1, wherein the matrix material or adhesive layer material is selected from the group consisting of silicone, epoxy, and wax. ### Claim 15 (depends on 1) The method according to claim 1, wherein the semiconductor layer sequence is an organic or inorganic light-emitting diode. ### Claim 16 An optoelectronic component comprising: a first converter layer on a sacrificial layer, wherein the first converter layer comprises quantum dots embedded in one of a matrix material or a luminescent polymer; a semiconductor layer sequence, wherein the first converter layer is in direct contact with the semiconductor layer sequence; and the sacrificial layer which is arranged at a side of the first converter layer facing away from the semiconductor layer sequence. ### Claim 17 (depends on 1) The method according to claim 1, wherein a second converter layer is applied at the side of the first converter layer facing away from the semiconductor layer sequence; wherein the sacrificial layer is arranged between the first and the second converter layer, and wherein the sacrificial layer is in direct contact with the first and the second converter layer. ### Claim 18 (depends on 16) The optoelectronic component according to claim 16, wherein the sacrificial layer is selected from the group consisting of: GaN, CeO2, AN, SiNx, HfO2, Ga2O3.