# US 10,319,785 B2 · Semiconductor device and method of manufacturing same

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- Number: US 10,319,785 B2
- Document ID: US10319785B2
- Status: Granted
- Kind: B2
- Application number: 15/952,939
- Filed: 2018-04-13
- Published: 2018-08-16
- Granted: 2019-06-11
- Earliest claimed: 2013-05-08
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Takashi Yokoyama
- Web page: https://patentgrep.com/patent/US10319785B2

## CPC

- H10B 63/30: {comprising selection components having three or more electrodes, e.g. transistors}
- H10B 61/22: {of the field-effect transistor [FET] type}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 86/01: Manufacture or treatment
- H10D 86/011: {comprising FinFETs}
- H10N 50/80: Constructional details
- H10N 70/245: {the species being metal cations, e.g. programmable metallization cells}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- H10N 50/10: Magnetoresistive devices
- H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies}
- H10N 70/8416: {adapted for supplying ionic species}
- H10N 70/883: {Oxides or nitrides}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate with a main surface side and back surface side;
planar-type transistor on the main surface side of the semiconductor substrate with source-drain regions in the semiconductor substrate, the source-drain regions extending from the main surface side to the back surface side of the semiconductor substrate, portions of the source-drain region being silicided, the silicided portions of the source-drain regions being laterally adjacent to un-silicided portions of the source-drain regions and extending from the main surface side to the back surface side of the semiconductor substrate;
an insultation layer on the back-surface side of the semiconductor substrate, the insulation layer having an opening therethrough to one of the source-drain regions; and
a conductive connection section in the opening in the insulation layer and in contact with the one of the silicided portions of the source-drain regions.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising a memory device electrically connected to the conductive connection section.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the conductive connection section is a conductive material filling the opening.

### Claim 4 (depends on 2)

The semiconductor device of claim 2, wherein the memory device comprises a resistance change element.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the resistance change element is a spin transfer torque-magnetic tunnel junction.

### Claim 6 (depends on 4)

The semiconductor device of claim 4, wherein:
the resistance change element includes an ion source layer and a resistance change layer, as a memory section,
the ion source layer of the resistance change element includes an ionizable metallic element, and one or more chalcogen elements selected from the group consisting of (Te), sulfur (S), and selenium (Se), and
the resistance change layer comprises a material having a resistance value higher than a resistance value of the ion source layer.

### Claim 7 (depends on 4)

The semiconductor device of claim 4, wherein the resistance change element includes a resistance change layer between a source line or a drain line and the conductive connection section.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the resistance change layer is in contact with a source or drain line.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, comprising an electrode between the resistance change layer and the source or drain line.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, comprising a wiring section on the main surface side of the semiconductor substrate.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the wiring section includes plural wiring layers.