# US 10,319,777 B2 · Pixel circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,777 B2 - Document ID: US10319777B2 - Status: Granted - Kind: B2 - Application number: 15/633,587 - Filed: 2017-06-26 - Published: 2017-10-26 - Granted: 2019-06-11 - Earliest claimed: 2013-08-02 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Corporation - Inventors: Yorito Sakano - Web page: https://patentgrep.com/patent/US10319777B2 ## CPC - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance - H04N 25/771: comprising storage means other than floating diffusion - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8033: {Photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/811: {Interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type. ## Claims ### Claim 1 A pixel circuit comprising: a first floating diffusion layer of a first conductivity-type between a first drain/source of a second conductivity-type and a first source/drain of the second conductivity-type, said first source/drain and said first drain/source touching said first floating diffusion layer; a photoelectric converter including a cathode and an anode, the anode touching the cathode, the cathode being electrically connected to said first floating diffusion layer, said cathode being of said first conductivity-type, said anode being of said second conductivity-type; a second floating diffusion layer of the first conductivity type electrically connected to said cathode; and a first layer of the second conductivity-type between said first floating diffusion layer and said second floating diffusion layer. ### Claim 2 (depends on 1) The pixel circuit according to claim 1, wherein said cathode touches said first floating diffusion layer and said second floating diffusion layer. ### Claim 3 (depends on 1) The pixel circuit according to claim 1, wherein said cathode is between said first floating diffusion layer and said anode. ### Claim 4 (depends on 1) The pixel circuit according to claim 1, further comprising: a second layer of the first conductivity type formed in the first layer, wherein said second floating diffusion layer is between a second drain/source of the second conductivity-type and said first source/drain. ### Claim 5 (depends on 4) The pixel circuit according to claim 4, wherein said first source/drain and said second drain/source touch said second floating diffusion layer. ### Claim 6 (depends on 4) The pixel circuit according to claim 4, further comprising: a selection transistor including a source electrically connected to said first drain/source. ### Claim 7 (depends on 6) The pixel circuit according to claim 6, wherein said source of the selection transistor is electrically connected to said second drain/source. ### Claim 8 (depends on 6) The pixel circuit according to claim 6, wherein the selection transistor further comprises: a drain electrically connected to a signal line. ### Claim 9 (depends on 1) The pixel circuit according to claim 1, further comprising: a gate insulation film between said first floating diffusion layer and a first gate electrode. ### Claim 10 (depends on 9) The pixel circuit according to claim 9, wherein said gate insulation film is between said first floating diffusion layer and a second gate electrode. ### Claim 11 (depends on 1) The pixel circuit according to claim 1, wherein said anode is configured to receive light, said photoelectric converter being configured to convert said light into electric charge. ### Claim 12 (depends on 1) The pixel circuit according to claim 1, further comprising: a first layer of the first conductivity-type in a second layer of the second conductivity-type, said second layer being between said first floating diffusion layer and the second floating diffusion layer of the first conductivity-type. ### Claim 13 (depends on 1) The pixel circuit according to claim 1, further comprising: a reset transistor controllable to provide electrical connection and disconnection between said first floating diffusion layer and a power-supply potential. ### Claim 14 (depends on 1) The pixel circuit according to claim 1, wherein said first conductivity-type is of a conductivity opposite to said second conductivity-type. ### Claim 15 (depends on 1) The pixel circuit according to claim 1, wherein said first conductivity-type is n-type. ### Claim 16 (depends on 1) The pixel circuit according to claim 1, wherein said second conductivity-type is p-type. ### Claim 17 (depends on 1) The pixel circuit according to claim 1, wherein an impurity concentration of the first conductivity-type in said first floating diffusion layer is higher than an impurity concentration of the first conductivity-type in said cathode. ### Claim 18 (depends on 1) The pixel circuit according to claim 1, wherein an impurity concentration of the second conductivity-type in said first source/drain is higher than an impurity concentration of the second conductivity-type in said anode. ### Claim 19 (depends on 18) The pixel circuit according to claim 18, wherein said impurity concentration of the second conductivity-type in said anode is lower than an impurity concentration of the second conductivity-type in said first drain/source.