# US 10,319,744 B2 · Analog circuit and semiconductor device

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- Number: US 10,319,744 B2
- Document ID: US10319744B2
- Status: Granted
- Kind: B2
- Application number: 16/133,823
- Filed: 2018-09-18
- Published: 2019-01-31
- Granted: 2019-06-11
- Earliest claimed: 2009-10-21
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Jun Koyama; Atsushi Hirose; Masashi Tsubuku; Kosei Noda
- Web page: https://patentgrep.com/patent/US10319744B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H04M 1/0266: {for a display module assembly}
- H04R 1/02: Casings; Cabinets {; Supports therefor;} Mountings therein (H04R1/28 takes precedence {; attachments for microphones H04R1/08; mounting of transducers in earpieces H04R1/1075})
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10H 20/80: Constructional details
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10K 59/351: {comprising more than three subpixels, e.g. red-green-blue-white [RGBW]}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H04M: TELEPHONIC COMMUNICATION (circuits for controlling other apparatus via a telephone cable and not involving telephone switching apparatus G08)
- H04R: LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS (producing sounds with frequency not determined by supply frequency G10K)
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

## Claims

### Claim 1

A semiconductor device comprising:
a first transistor;
a second transistor;
a light emitting element;
a first wiring; and
a second wiring,
wherein one of a source and drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and drain of the second transistor is electrically connected to the light emitting element,
wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,
wherein each of the first transistor and the second transistor includes a gate, a first insulating layer over the gate, an oxide semiconductor over the first insulating layer, a second insulating layer over the oxide semiconductor, and the source and the drain over the second insulating layer,
wherein the oxide semiconductor is an intrinsic or substantially intrinsic, and
wherein in each of the first transistor and the second transistor, a drain current is 1×10−13 A or lower within a gate voltage range of −5 V to −20 V when the drain voltage is 1 V and 10 V.

### Claim 2

A semiconductor device comprising:
a first transistor;
a second transistor;
a light emitting element;
a first wiring; and
a second wiring,
wherein one of a source and drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and drain of the second transistor is electrically connected to the light emitting element,
wherein the other of the source and drain of the second transistor is electrically connected to the second wiring,
wherein each of the first transistor and the second transistor includes a first gate, a first insulating layer over the first gate, an oxide semiconductor over the first insulating layer, the source and the drain over the oxide semiconductor, a second insulating layer over the source and the drain, and a second gate over the second insulating layer,
wherein the oxide semiconductor is an intrinsic or substantially intrinsic, and
wherein in each of the first transistor and the second transistor, a drain current is 1×10−13 A or lower within a gate voltage range of −5 V to −20 V when the drain voltage is 1 V and 10 V.