# US 10,319,740 B2 · Memory device and method for manufacturing memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,740 B2 - Document ID: US10319740B2 - Status: Granted - Kind: B2 - Application number: 15/917,954 - Filed: 2018-03-12 - Published: 2019-02-28 - Granted: 2019-06-11 - Earliest claimed: 2017-08-31 - Assignees: Toshiba Memory Corporation - Applicants: Toshiba Memory Corporation - Inventors: Yasuhito Yoshimizu - Web page: https://patentgrep.com/patent/US10319740B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/10: characterised by the top-view layout - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/35: with a cell select transistor, e.g. NAND - H10B 43/10: characterised by the top-view layout - H10B 43/35: with cell select transistors, e.g. NAND - H10B 63/845: {the switching components being connected to a common vertical conductor} - H10D 30/6891: {characterised by the shapes, relative sizes or dispositions of the floating gate electrode} - H10D 30/694: {characterised by the shapes, relative sizes or dispositions of the gate electrodes} - H10D 62/292: {Non-planar channels of IGFETs (resulting from the gate electrode dispositions, e.g. within trenches H10D64/512)} - H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures} - H10D 64/037: {comprising charge-trapping insulators} - H10N 70/011: {Manufacture or treatment of multistable switching devices} - H10N 70/20: Multistable switching devices, e.g. memristors - H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} - H10N 70/245: {the species being metal cations, e.g. programmable metallization cells} - H10N 70/823: {adapted for essentially horizontal current flow, e.g. bridge type devices} - H10N 70/8828: {Tellurides, e.g. GeSbTe} - H10N 70/883: {Oxides or nitrides} - H10N 70/8833: {Binary metal oxides, e.g. TaOx} - H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials} - H10P 50/283: {by chemical means} - H10W 20/43: Layouts of interconnections - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 14/69391: {the material containing aluminium, e.g. Al2O3} - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A memory device includes first and second conductive layers, first and second semiconductor members, first and second charge storage members, first and second insulating members, and first and second insulating layers. The second conductive layer is distant from the first conductive layer. The first semiconductor member is positioned between the first and second conductive layers. The second semiconductor member is positioned between the first semiconductor member and the second conductive layer. The first insulating layer includes a first region positioned between the first semiconductor member and the first charge storage member and a second region positioned between the first semiconductor member and the second semiconductor member. The second insulating layer includes a third region positioned between the second semiconductor member and the second charge storage member and a fourth region positioned between the second region and the second semiconductor member. ## Claims ### Claim 1 A memory device comprising: a first conductive layer extending along a first direction; a second conductive layer being distant from the first conductive layer in a second direction crossing the first direction and extending along the first direction; a first semiconductor member extending in a third direction crossing a plane including the first direction and the second direction, and passing through between the first conductive layer and the second conductive layer; a second semiconductor member extending in the third direction and passing through between the first semiconductor member and the second conductive layer; a first charge storage member provided between the first conductive layer and the first semiconductor member; a first insulating member provided between the first conductive layer and the first charge storage member; a first insulating layer including a first region and a second region, the first region being positioned between the first semiconductor member and the first charge storage member, the second region being positioned between the first semiconductor member and the second semiconductor member; a second charge storage member provided between the second conductive layer and the second semiconductor member; a second insulating member provided between the second conductive layer and the second charge storage member; and a second insulating layer including a third region and a fourth region, the third region being positioned between the second semiconductor member and the second charge storage member, the fourth region being positioned between the second region and the second semiconductor member, wherein the first semiconductor member and the second semiconductor member are non-linear in the third direction. ### Claim 2 (depends on 1) The device according to claim 1, further comprising: an insulating part including a first insulating region and a second insulating region, at least a part of the first insulating region being positioned between the second region and the fourth region, a direction from the second insulating region toward the first semiconductor member being along the first direction, and a material included in the second insulating region being different from a material included in the first insulating region. ### Claim 3 (depends on 1) The device according to claim 1, further comprising: third to sixth semiconductor members extending along the third direction, a direction from the first semiconductor member toward the third semiconductor member being along the first direction, a direction from the second semiconductor member toward the fourth semiconductor member being along the first direction, a position of the first conductive layer in the second direction being positioned between a position of the first semiconductor member in the second direction and a position of the fifth semiconductor member in the second direction, a position of the second conductive layer in the second direction being positioned between a position of the second semiconductor member in the second direction and a position of the sixth semiconductor member in the second direction, a position of the fifth semiconductor member in the first direction being positioned between a position of the first semiconductor member in the first direction and a position of the second semiconductor member in the first direction, and a position of the sixth semiconductor member in the first direction being positioned between the position of the first semiconductor member in the first direction and the position of the second semiconductor member in the first direction. ### Claim 4 (depends on 1) The device according to claim 1, wherein a direction from the first charge storage member toward a part of the first conductive layer is along the first direction, and a direction from the second charge storage member toward a part of the second conductive layer is along the first direction. ### Claim 5 (depends on 1) The device according to claim 1, further comprising: a conductive base member electrically connected to the first semiconductor member and the second semiconductor member, the first semiconductor member having a first surface opposing the first charge storage member, the second semiconductor member having a second surface opposing the second charge storage member, and a space between the first surface and the second surface changing depending on a position being distant from the conductive base member in the third direction. ### Claim 6 (depends on 2) The device according to claim 2, wherein the insulating part further includes a third insulating region, the first semiconductor member passes through between the second insulating region and the third insulating region, and a material included in the third insulating region is different from a material included in the second insulating region. ### Claim 7 A method for manufacturing a memory device comprising: forming a first structural body and a second structural body, the first structural body extending along a first direction, the second structural body extending along the first direction, the second structural body being distant from the first structural body along a second direction crossing the first direction, the first structural body including a first film, the second structural body including a second film; forming a third structural body including a first material insulating part, a second material insulating part and a third material insulating part, the first material insulating part being positioned between the first structural body and the second structural body in the second direction, the second material insulating part being positioned between the first material insulating part and the second structural body in the second direction, the third material insulating part being positioned between the first material insulating part and the second material insulating part, a third material of the third material insulating part being different from a first material of the first material insulating part and being different from a second material of the second material insulating part; forming a first hole in the third structural body by removing a part of the first material insulating part, a part of the second material insulating part, and a part of the third material insulating part; forming a fourth structural body having a second hole by forming a film of a fourth material in the first hole after recessing the first material insulating part and the second material insulating part exposed to the first hole; forming a third hole by removing a part of the fourth structural body, a first residual portion and a second residual portion of the fourth structural body remaining in the third hole; forming a fifth structural body from a fifth material by burying the fifth material in the third hole; forming a fourth hole and a fifth hole by removing the first residual portion and the second residual portion after forming the fifth structural body; and forming a first functional film in the first film and the second film exposed to the fourth hole and the fifth hole, respectively, wherein the first structural body and the second structural body member are non-linear in a third direction crossing a plane including the first direction and the second direction. ### Claim 8 (depends on 7) The method according to claim 7, further comprising: forming a first member in a residual space of the fourth hole and a residual space of the fifth hole, the first member including a conductive member extending along the third direction or a semiconductor member. ### Claim 9 (depends on 7) The method according to claim 7, wherein the first film and the second film exposed to the fourth hole and the fifth hole are recessed after the forming the fourth hole and the fifth hole and before the forming the first functional film. ### Claim 10 (depends on 7) The method according to claim 7, where the forming the first functional film includes forming a film including at least one selected from the group consisting of a silicon oxide film, a silicon nitride film, and an aluminum oxide film on a surface of the first film and the second film exposed to the fourth hole and the fifth hole, respectively. ### Claim 11 (depends on 7) The method according to claim 7, wherein a plurality of the first films are provided in the first structural body, the first structural body further includes a plurality of third films, the first films and the third films are arranged alternately in the third direction, a plurality of the second films are provided in the second structural body, the third structural body further includes a plurality of fourth films, and the second films and the fourth films are arranged alternately in the third direction. ### Claim 12 (depends on 7) The method according to claim 7, wherein a plurality of fourth holes including the fourth hole are formed to be arranged in the first direction between the first structural body and the second structural body, and a plurality of fifth holes including the fifth hole are formed to be arranged in the first direction between the first structural body and the second structural body, and a center distance of the adjacent fourth holes in the first direction is equal to a width of the first hole in the first direction or narrower than the width. ### Claim 13 (depends on 7) The method according to claim 7, wherein a spacer film is formed on an inner surface of the first hole before forming the fourth structural body. ### Claim 14 (depends on 7) The method according to claim 7, wherein the fourth hole and the fifth hole are expanded before forming the first functional film, and the fourth hole and the fifth hole are joined. ### Claim 15 (depends on 7) The method according to claim 7, wherein the first material insulating part, the second material insulating part, and the third material insulating part are homogenized. ### Claim 16 (depends on 8) The method according to claim 8, wherein the forming the first functional film includes forming a memory film insulating film on a surface of the first film and the second film exposed to the fourth hole and the fifth hole, respectively, and forming a conductive charge storage film on a surface of the memory film insulating film. ### Claim 17 (depends on 9) The method according to claim 9, wherein a size of the fourth hole and the fifth hole is expanded after the forming the first functional film and before the forming the first member. ### Claim 18 A method for manufacturing a memory device comprising: forming a first structural body and a second structural body, the first structural body extending along a first direction, the second structural body extending along the first direction, the second structural body being distant from the first structural body along a second direction crossing the first direction, the first structural body including a first film, the second structural body including a second film, forming a third structural body including a first material insulating part, a second material insulating part, and a third material insulating part, the first material insulating part being positioned between the first structural body and the second structural body in the second direction, the second material insulating part being positioned between the first material insulating part and the second structural body in the second direction, the third material insulating part being positioned between the first material insulating part and the second material insulating part, a third material of the third material insulating part being different from a first material of the first material insulating part and being different from a second material of the second material insulating part, forming a first hole in the third structural body by removing a part of the first material insulating part, a part of the second material insulating part, and a part of the third material insulating part; forming a fourth structural body having a second hole by forming a film of a fourth material in the first hole after selectively forming a spacer insulating part on the third material insulating part exposed to the first hole, forming a third hole by removing a part of the fourth structural body, a first residual portion and a second residual portion of the fourth structural body remaining in the third hole; forming a fifth structural body from a fifth material by burying the fifth material in the third hole; forming a fourth hole and a fifth hole by removing the first residual portion and the second residual portion after forming the fifth structural body; and forming a first functional film in the first film and the second film exposed to the fourth hole and the fifth hole, respectively, wherein the first structural body and the second structural body are non-linear in a third direction crossing a plane including the first direction and the second direction. ### Claim 19 (depends on 18) The method according to claim 18, wherein the third material insulating part and the spacer insulating part are selectively removed before forming the fifth structural body, and the fifth material is buried in the third hole, and a space formed by removing third material insulating part and the spacer insulating part. ### Claim 20 (depends on 19) The method according to claim 19, wherein the third material insulating part and the spacer insulating part include silicon.