# US 10,319,737 B2 · Semiconductor device and method of manufacturing the same

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- Number: US 10,319,737 B2
- Document ID: US10319737B2
- Status: Granted
- Kind: B2
- Application number: 15/815,004
- Filed: 2017-11-16
- Published: 2018-04-05
- Granted: 2019-06-11
- Earliest claimed: 2014-02-25
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Jong Man Kim
- Web page: https://patentgrep.com/patent/US10319737B2

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10D 30/0413: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors}
- H10D 30/693: {Vertical IGFETs having charge trapping gate insulators}
- H10D 64/037: {comprising charge-trapping insulators}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P 50/73: {using masks for insulating materials}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The semiconductor device includes a stacked structure having alternately stacked conductive patterns and interlayer insulating patterns, a through-hole passing through the stacked structure, a channel pattern formed in the through-hole and protruding from an inside of the through hole over the through-hole, and a capping conductive pattern formed to be in contact with the protruded channel pattern and have a width greater than the through-hole.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
alternately stacking first material layers and second material layers, wherein the second material layers are formed of a different material from the first material layers;
forming a mask pattern including a first opening area on the stacked first and second material layers;
forming a through-hole passing through the stacked first and second material layers by etching the stacked first and second material layers exposed by the first opening area;
forming a channel pattern protruding from an inside of the through-hole over the through-hole;
reducing a size of the mask pattern to define a second opening area, wherein the second opening area has a width greater than the first opening area and exposes a part of the uppermost surface of the stacked first and second material layers;
forming a capping conductive pattern filling the second opening area; and
removing the reduced mask pattern.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the channel pattern comprises:
forming a channel layer along a surface of the through-hole and a surface of the mask pattern;
filling a center part of the through-hole opened by the channel layer with a core insulating layer having a height lower than the stacked first and second material layers;
forming a protection layer on the core insulating layer;
etching a part of the channel layer disposed on the mask pattern and exposed by the protection layer; and
removing the protection layer to expose the core insulating layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the forming of the capping conductive pattern comprises;
forming a capping conductive layer covering the core insulating layer, the mask pattern, and the channel pattern; and
planarizing a surface of the capping conductive layer by a planarization process in which the mask pattern is used as a planarization-stopping layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein while the surface of the capping conductive layer is planarized, a surface of the channel pattern is planarized.

### Claim 5 (depends on 2)

The method of claim 2, wherein the forming of the core insulating layer comprises:
filling the center part of the through-hole with poly silizane (PSZ) having a height lower than the stacked first and second material layers; and
annealing the poly silizane.

### Claim 6 (depends on 2)

The method of claim 2, wherein the protection layer includes a spin-on-carbon (SOC) layer.

### Claim 7 (depends on 2)

The method of claim 2, further comprising:
forming a multilayered dielectric layer including a charge blocking layer, data storage layer, and tunnel insulating layer along the surface of the through-hole and the surface of the mask pattern, before the forming of the channel pattern; and
etching a part of the multilayered dielectric layer formed along the surface of the mask pattern to expose the mask pattern, after etching the part of the channel layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein the etching the part of the multilayered dielectric layer comprises:
etching the tunnel insulating layer to expose the data storage layer;
etching the data storage layer to expose the charge blocking layer; and
etching the charge blocking layer to expose the mask pattern.

### Claim 9 (depends on 8)

The method of claim 8, wherein the tunnel insulating layer and the charge blocking layer are etched by a dry etching process and the data storage layer is etched by an etching process using phosphoric acid.

### Claim 10 (depends on 7)

The method of claim 7, wherein the height of the multilayered dielectric layer remaining after the part of the multilayered dielectric layer is etched is lower than the core insulating layer.

### Claim 11 (depends on 1)

The method of claim 1, wherein the second material layers are formed of a material having an etch selectivity with respect to the first material layers.

### Claim 12 (depends on 1)

The method of claim 1, wherein the first material layers are insulating layers and the second material layers are conductive layers.

### Claim 13 (depends on 1)

The method of claim 1, wherein the first material layers are insulating layers and the second material layers are sacrificial layers.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
removing the sacrificial layers; and
filling areas from which the sacrificial layers are removed with conductive patterns.